NEC UPA1453H Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PNP SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE
INDUSTRIAL USE
PA1453
DESCRIPTION
The µPA1453 is PNP silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE. Low VCE(sat).
FE = 100 to 400 (at IC = –2 A)
h
CE(sat) = –0.3 V MAX. (at IC = –2 A)
V
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1453H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO –60 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO –60 V
EBO –7 V
C(DC) –5 A/unit
C(pulse)* –10 A/unit
B(DC) –1.0 A/unit
T1** 3.5 W
T2*** 28 W
j 150 ˚C
stg –55 to +150 ˚C
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
2.54
CONNECTION DIAGRAM
5 7
4
2, 4, 6, 8
3, 5, 7, 9
1, 10
6 8
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
4.0
10 MIN.
1.4
0.5 ±0.1
9
10
* PW ≤ 300
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3519
(O. D. No. IC-6339)
Date Published September 1994 P
Printed in Japan
µ
s, Duty Cycle ≤ 10 %
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
g
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO –10
Emitter Leakage Current IEBO –10
DC Current Gain hFE1
DC Current Gain hFE2
DC Current Gain hFE3
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 2.5
Fall Time tf 1
*
60 220 — VCE = –1 V, IC = –0.1 A
*
100 220 400 — VCE = –1 V, IC = –2 A
*
50 100 VCE = –2 V, IC = –5 A
*
*
–0.2 –0.3 V IC = –2 A, IB = –0.2 A
–0.9 –1.2 V IC = –2 A, IB = –0.2 A
µ
A VCB = –50 V, IE = 0
µ
A VEB = –5 V, IC = 0
µ
s
IC = –2 A
µ
µ
IB1 = –IB2 = –0.2 A
s
s
.
VCC = –30 V, RL = 15 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1453
.
.
VIN
PW
.
PW = 50 s
Duty Cycle ≤ 2 %
µ
.
IB1
IB2
.
V
BB = 5 V
.
L = 15 Ω
R
.
IC
T.U.T.
.
VCC = –30 V
.
.
Base Current
Wave Form
Collector
Current
Wave Form
10 %
90 %
ton
I
B2
IB1
IC
tftst
2
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