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MNLMH6628-X-RH
Technical data
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National Semiconductor MNLMH6628-X-RH Technical data

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MNLMH6628-X-RH REV 0A0
DUAL WIDEBAND, LOW-NOISE, VOLTAGE FEEDBACK OP AMP, GUARANTEED TO 300k rd(Si) TESTED TO MIL-STD-883, METHOD 1019
General Description
Each of the LMH6628's closely matched channels provides a 300MHz unity gain bandwidth and low input voltage noise density (2nV/SqRtHz). Low 2nd/3rd harmonic distortion (-65/-74dBc at 10MHz) makes the LMH6628 a perfect wide dynamic-range amplifier for matched I/Q channels.
With its fast and accurate settling (12ns to 0.1%), the LMH6628 is also an excellent choice for wide dynamic range, anti-aliasing filters to buffer the inputs of hi resolution analog-to-digital converters. Combining the LMH6628's two tightly matched amplifiers in a single package reduces cost and board space for many composite amplifier applications such as active filters, differential line drivers/receivers, fast peak detectors and instrumentation amplifiers.
The LMH6628 is fabricated using National's VIP 10 (TM) comlimentary bipolar process.
MICROCIRCUIT DATA SHEET
Original Creation Date: 04/29/03
Last Update Date: 05/13/03
Last Major Revision Date:
Industry Part Number
LMH6628
Prime Die
LMH6628A
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
NS Part Numbers
LMH6628J-QML LMH6628J-QMLV LMH6628JFQML LMH6628JFQMLV LMH6628WG-QML LMH6628WG-QMLV LMH6628WGFQML LMH6628WGFQMLV
Subgrp Description Temp ( C)
1 Static tests at +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55
o
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MNLMH6628-X-RH REV 0A0
Features
- Wide unity-gain bandwidth: 300 MHz
- Low noise: 2.0nV/SqRtHz
- Low distortion: -65/-74dBc (10MHz)
- Settling time: 12ns to 0.1%
- Wide supply voltage range: +2.5V to +6V
- High output current +85mA
- Improved replacement for CLC428 CONTROLLING DOCUMENTS: LMH6628J-QML 5962-0254501MPA LMH6628J-QMLV 5962-0254501VPA LMH6628JFQML 5962F0254501MPA LMH6628JFQMLV 5962F0254501VPA LMH6628WG-QML 5962-0254501MZA LMH6628WG-QMLV 5962-0254501VZA LMH6628WGFQML 5962F0254501MZA LMH6628WGFQMLV 5962F0254501VZA
MICROCIRCUIT DATA SHEET
Applications
- High speed dual op amp
- Low noise integrators
- Low noise active filters
- Driver/receiver for transmission systems
- High-speed detectors
- I/Q channel amplifiers
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MNLMH6628-X-RH REV 0A0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage
Maximum Junction temperature
(Note 2)
Lead temperature
Differential input voltage
Common mode input voltage
Storage temperature range
Power Dissipation
(Note 2)
Short circuit current
(Note 3)
Thermal Resistance
ThetaJA
ThetaJC
Package Weight
(typical)
ESD Tolerance
(Note 4)
MICROCIRCUIT DATA SHEET
+7V dc
+175 C
+300 CSoldering, 10 seconds
V+ - V-
V+ - V-
-65 C < Ta < +150 C
1.0W
135 C/WCeramic DIP (Still Air) 75 C/W (500LF/Min Air Flow) 200 C/WCeramic SOIC (Still Air) 145 C/W (500LF/Min Air Flow)
30 C/WCeramic DIP 19 C/WCeramic SOIC
TBDCeramic DIP TBDCeramic SOIC
4000V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
Note 3: Output is short circuit protected to ground, however maximum reliability is obtained Note 4: Human body model, 1.5k Ohms in series with 100pF.
Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperatuer). The maximum allowable power dissipation at any temperatuer is Pdmax = (Tjmax -TA) / ThetaJA or the number given in the Absoulute Maximum Ratings, whichever is lower.
if output current does not exceed 160mA.
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MNLMH6628-X-RH REV 0A0
Recommended Operating Conditions
Supply Voltage
Ambient Operating Temperture Range
MICROCIRCUIT DATA SHEET
+2.5V to +6.0V
-55 C < Ta < +125 C
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MNLMH6628-X-RH REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: Static and DC Tests
(The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C
SYMBOL PARAMETER CONDITIONS NOTES
Ib Input Bias
Vio Input Offset
Icc Supply Current Rl = infinity 3 24 mA 1
PSRR Power Supply
Vout Output Voltage
Current
Voltage
Rejection Ration
Range
+Vs = +4.0V to +5.0v, -Vs = -4.0V to
-5.0V
Rl = Infinity -5.0 +5.0 V 1, 2,
3 -10 +10 uA 1
3 -2+2mV1
PIN­NAME
MIN MAX UNIT
-20 +20 uA 2
-20 +20 uA 3
-2.6 +2.6 mV 2, 3
24 mA 2
25 mA 3 60 dB 1 55 dB 2, 3
AC PARAMETERS: Frequeuncy Domain Response
(The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C
SSBW Small Signal
Bandwith
GFP Gain Flatness
Peaking
GFR Gain Flatness
Rolloff
Aol Open Loop Gain 2 55 dB 4
-3 dB bandwidth, Vout < 0.5 Vpp 2 50 MHz 4
0.1 MHz to 200 MHz, Vout <0.5 Vpp 2 0.6 dB 4
0.1 MHz to 20 MHz, Vout <0.5 Vpp 2 0.6 dB 4
SUB-
GROUPS
3
AC PARAMETERS: Distortion and Noise Tests.
(The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vcc = +5V dc, Av = +2, Rl = 100 Ohms, Rf = 100 Ohms, -55 C < Ta < +125 C
HD2 Second Harmonic
Distortion
HD3 Third Harmonic
Distortion
1 Vpp at 10 MHz 2 50 dBc 4
1 Vpp at 10 MHz 2 60 dBc 4
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MNLMH6628-X-RH REV 0A0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.) DC: " Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as
specified on the Internal Processing Instructions (IPI).
SYMBOL PARAMETER CONDITIONS NOTES
Ib Input Bias
Current
Vio Input Offset
Voltage
Icc Supply Current Rl = Infinity 1 -1 +1 mA 1
Note 1: If not tested, shall be guaranteed to the limits specified in table 1. Note 2: Group A testing only. Note 3: Pre and post irradiation limits are identical to those listed under electrical
1019.
1 -1.0 +1.0 uA 1
1 -0.2 +0.2 mV 1
PIN­NAME
MIN MAX UNIT
SUB-
GROUPS
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MNLMH6628-X-RH REV 0A0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
06403HRA1 CERAMIC SOIC (WG), 10 LEAD (B/I CKT) 07082HRA4 CERDIP (J), 8 LEAD (B/I CKT) J08ARL CERDIP (J), 8 LEAD (P/P DWG) P000480A CERDIP (J), 8 LEAD (PIN OUT) P000484A CERAMIC SOIC (WG), 10 LEAD (PIN OUT) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
MICROCIRCUIT DATA SHEET
7
V
OUT1
V
INV1
V
NON-INV1
-V
CC
1 8
2 7
3 6
4 5
LMH6628J
8 - LEAD DIP
+V
CC
V
OUT2
V
INV2
V
NON-INV2
N
MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
CONNECTION DIAGRAM
TOP VIEW
P000480A
V
OUT1
V
INV1
V
NON-INV1
-V
CC
N/C
1 10
2 9
3 8
4 7
5 6
LMH6628WG
10 - LEAD CERAMIC SOIC
+V
CC
V
OUT2
V
INV2
V
NON-INV2
N/C
N
MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
CONNECTION DIAGRAM
TOP VIEW
P000484A
MNLMH6628-X-RH REV 0A0
MICROCIRCUIT DATA SHEET
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0004149 05/13/03 Rose Malone Initial MDS Release: MNLMH6628-X-RH, Rev. 0A0
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