MCC S8A, S8B, S8D, S8G, S8J Datasheet

M C C

omponents 21201 Itasca Street Chatsworth

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Features

•For Surface Mount Applications

•Extremely Low Thermal Resistance

•Easy Pick And Place

• High Temp Soldering: 250° C for 10 Seconds At Terminals

•High Current Capability

Maximum Ratings

•Operating Temperature: -55° C to +150° C

•Storage Temperature: -55° C to +150° C

•Maximum Thermal Resistance; 8° C/W Junction To Lead

Microsemi		Maximum	Maximum	Maximum
Part	Device	Recurrent	RMS	DC
Number	Marking	Peak Reverse	Voltage	Blocking
		Voltage		Voltage
S8A	S8A	50V	35V	50V
S8B	S8B	100V	70V	100V
S8D	S8D	200V	140V	200V
S8G	S8G	400V	280V	400V
S8J	S8J	600V	420V	600V
S8K	S8K	800V	560V	800V
S8M	S8M	1000V	700V	1000V

Electrical Characteristics @ 25° C Unless Otherwise Specified

Average Forward	IF(AV)	8.0A	TJ = 75° C
Current
Peak Forward Surge	IFSM	300A	8.3ms, half sine
Current
Maximum		1.20V	IFM = 8.0A;
Instantaneous	VF
Forward Voltage			TJ = 25° C*
Maximum DC		10 A	TJ = 25° C
Reverse Current At	IR
Rated DC Blocking		100 A	TJ = 100° C
Voltage
Typical Junction	CJ	150pF	Measured at
Capacitance			1.0MHz, VR=4.0V

*Pulse test: Pulse width 200 sec, Duty cycle 2%

S8A

THRU

S8M

8 Amp

Silicon Rectifier 50 to 1000 Volts

DO-214AB

(SMCJ) (Round Lead)

H

Cathode Band

J

	A	C
	E
F	D	B
G
	DIMENSIONS

	INCHES		MM
DIM	MIN	MAX	MIN	MAX	NOTE
A	.200	.214	5.08	5.43
B	.177	.203	4.70	5.30
C	.002	.005	.05	.13
D	---	.02	---	.51
E	.053	.067	1.35	1.70
F	.168	.179	4 .27	4.55
G	.320	.330	8.13	8.38
H	.239	.243	6.08	6.18
J	.234	.240	5.95	6.10

SUGGESTED SOLDER

PAD LAYOUT

0.190

0.200

0.070”

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