Fairchild Semiconductor MMBFJ175, MMBFJ176, MMBFJ177, J177, J175 Datasheet
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J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
g
J174
J175
J176
MMBFJ175
MMBFJ176
MMBFJ177
J177
G
D
S
G
D
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
st
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage - 30 V
Gate-Source Voltage 30 V
Forward Gate Current 50 mA
Operating and Stora ge Junction Temperature Range -55 to +150
TO-92
SOT-23
Mark: 6W / 6X / 6Y
S
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
J174 - J177 *MMBFJ175
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Ther mal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
J174-177, Rev. A
P-Channel Switch
(BR)
)
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
B
I
V
GSS
GSS
GS(off
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA
Gate-Source Cutoff Voltage VDS = - 15 V, ID = - 10 nA
ON CHARACTERISTICS
I
DSS
r
DS(on)
Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0
Drain-Source On Resistance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
= 1.0 µA, VDS = 0
I
G
V
0.1 V, VGS = 0
≤
DS
J174
J175
J176
J177
J174
J175
J176
J177
J174
J175
J176
J177
30 V
5.0
3.0
1.0
0.8
- 20
- 7.0
- 2.0
- 1.5
10
6.0
4.0
2.5
- 100
- 60
- 25
- 20
85
125
250
300
V
V
V
V
mA
mA
mA
mA
Ω
Ω
Ω
Ω
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
Typical Characteristics
Common Drain-Source
-20
-16
-12
-8
-4
D
I - DRAIN CURRENT (mA )
0
T = 25°C
A
TYP V = 4.5 V
GS(off)
V = 0 V
GS
V - DRAIN-SOURCE VOLT AGE (V)
DS
0.5 V
1.0 V
1.5 V
2.0 V
2.5 V
3.0 V
3.5 V
Parameter Interactions
100
50
r
DS
10
5
fs
1
g - TRANSCONDUCTANCE (mmhos)
-5-4-3-2-10
12 510
V - GATE CUTOFF VOLTAGE (V)
GS (OFF)
I
DSS
g
fs
fs
I , g @ V = 15V,
DSS
V = 0 PULSED
GS
r @ -100 mV, V = 0
DS
V @ V = - 15V,
GS(off)
I = - 1.0 µA
D
DS
GS
DS
DS
1,000
500
100
50
10
r - DRAIN "ON" RESISTANCE
DS
(
Ω
)
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