Fairchild Semiconductor MMBFJ113, MMBFJ111, MMBFJ112, J111, J112 Datasheet
...
Discrete POWER & Signal
Technologies
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
J111
J112
J113
G
S
D
TO-92
MMBFJ111
MMBFJ112
MMBFJ113
G
SOT-23
Mark: 6P / 6R / 6S
S
D
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 35 V
Ga t e- Sour c e V oltag e - 35 V
Forward Gate Current 50 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
J111- J113 *MMBFJ111
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556 °C/W
350
2.8
225
1.8
mW
mW/°C
°C/W
N-Channel Switch
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
I
D(off)
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = - 15 V, VDS = 0 - 1.0 nA
Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 µA J111
Gate-Source Cutoff Voltage VDS = 5.0 V, VGS = - 10 V 1.0 nA
ON CHARACTERISTICS
I
DSS
r
DS(on)
Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 J111
Drain- So ur ce On Resistance VDS ≤ 0.1 V, VGS = 0 J111
= - 1.0 µA, VDS = 0
I
G
J112
J113
J112
J113
J112
J113
- 35 V
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
20
5.0
2.0
30
50
100
V
V
V
mA
mA
mA
Ω
Ω
Ω
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
SMALL-SIGNAL CHARACTERISTICS
C
C
C
C
dg(on)
sg(on)
dg(off)
sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF
Sourc e- Gate O ff C apacit ance VDS = 0, VGS = - 10 V, f = 1.0 MHz 5.0 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
Typical Characteristics
Commo n Drain-Sourc e
10
V = 0 V
GS
8
- 0.2 V
- 0.4 V
6
4
2
D
I - DRAIN CURRENT (mA)
0
0 0.4 0.8 1.2 1.6 2
V - DRAIN-SOURCE VOLTAGE (V)
DS
- 1.4 V
T = 25°C
A
TYP V = - 2.0 V
GS(off)
- 0.6 V
- 0.8 V
- 1.0 V
VDS = 0, VGS = 0, f = 1.0 MHz 28 pF
Parameter Interactions
100
r
DS
g
fs
I , g @ V = 15V,
fs
DSS
V = 0 PU LSED
GS
r @ 1.0 mA, V = 0
DS
V @ V = 15V,
GS(off)
DSS
I = 1.0 nA
D
I
___
DS
GS
DS
DS
_
- 1.2 V
50
20
10
fs
5
g - TRANSCONDUCTANCE (mmhos)
0.5 1 2 5 10
V - GATE CUTOFF VOLTAGE (V)
GS (OFF)
r - DRAIN "ON" RE S ISTANCE
DS
100
50
20
10
(
ΩΩ
5
)
_
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