Fairchild Semiconductor BD682, BD678A, BD680A, BD676A Datasheet
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
BD676A/678A/680A/682
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
VCEO
VEBO
IC
ICP
IB
P
C
R
θja
T
J
T
STG
Collector-Base Voltage : BD676A
Collector-Emitter Voltage : BD676A
Emitter-Base Voltage - 5 V
Collector Current (DC) - 4 A
*Collector Current (Pulse) - 6 A
Base Current - 100 mA
Collector Dissipation (TC=25°C) 14 W
Thermal Resistance (Junction to Ambient) 88 °C/W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
: BD678A
: BD680A
: BD682
: BD678A
: BD680A
: BD682
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
TO-126
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
I
CBO
I
CEO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage
V
CE
(on) * Base-Emitter On Voltage : BD676A/678A/680A
V
BE
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
Collector-Base Voltage : BD676A
Collector Cut-off Current : BD676A
Emitter Cut-off Current V
* DC Current Gain : BD676A/678A/680A
: BD676A
: BD678A
: BD680A
: BD682
: BD678A
: BD680A
: BD682
: BD678A
: BD680A
: BD682
: BD682
: BD676A/678A/680A
: BD682
: BD682
I
= - 50mA, IB = 0 - 45
C
- 60
- 80
- 100
V
= - 45V, IE = 0
CB
V
= - 60V, IE = 0
CB
= - 80V, IE = 0
V
CB
V
= - 100V, V
CB
V
= - 45V, V
CE
V
= - 60V, V
CE
V
= - 80V, V
CE
= - 100V, V
V
CE
= - 5V, IC = 0 - 2 mA
EB
V
= - 3V, IC = - 2A
CE
V
= - 3V, IC = - 1.5A
CE
BE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
= 0
750
750
I
= - 2A, IB = - 40mA
C
= - 1.5A, IB = - 30mA
I
C
V
= - 3V, IC = - 2A
CE
= - 3V, IC = - 1.5A
V
CE
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
- 2.8
- 2.5VV
- 2.5
- 2.5VV
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
Typical Characteristics
BD676A/678A/680A/682
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-4.0
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
[A], COLLECTOR CURRENT
C
I
-0.4
-0.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = 3V
VCE = -3V
IC = 250 I
-2.4
-2.0
-1.6
-1.2
-0.8
(sat)[V], SATURATION VOLTAGE
-0.4
CE
V
-0.0
-0.1 -1 -10
B
IC[A], COLLECTOR CURRENT
IC(max). Pulsed
IC(max). Continuous
DC
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
BD676A
BD678A
BD680A
BD682
10µs
100µs
1ms
10ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
20
16
12
8
4
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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