Fairchild Semiconductor BD681, BD679A, BD677A, BD675A Datasheet
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
BD675A/677A/679A/681
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
CBO
VCEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
Collector-Emitter Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
45
60
80
100
V
V
V
V
V
V
V
V
Emitter-Base Voltage 5 V
Collector Current (DC) 4 A
*Collector Current (Pulse) 6 A
Base Current 100 mA
Collector Dissipation (TC=25°C) 40 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
I
I
CBO
CEO
Collector-Base Voltage : BD675A
Collector Cut-off Current : BD675A
: BD677A
: BD679A
: BD681
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage
V
CE
(on) * Base-Emitter ON Voltage : BD675A/677A/679A
V
BE
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International Rev. A, February 2000
Emitter Cut-off Current V
* DC Current Gain : BD675A/677A/679A
: BD675A
: BD677A
: BD679A
: BD681
: BD677A
: BD679A
: BD681
: BD681
: BD675A/677A/679A
: BD681
: BD681
I
= 50mA, IB = 0 45
C
60
80
100
V
= 45V, IE = 0
CB
= 60V, IE = 0
V
CB
= 80V, IE = 0
V
CB
V
= 100V, V
CB
V
= 45V, V
CE
= 60V, V
V
CE
= 80V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 2 mA
EB
V
= 3V, IC = 2A
CE
= 3V, IC = 1.5A
V
CE
= 2A, IB = 40mA
I
C
I
= 1.5A, IB = 30mA
C
V
= 3V, IC = 2A
CE
= 3V, IC = 1.5A
V
CE
BE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
= 0
750
750
200
200
200
200
500
500
500
500
2.8
2.5VV
2.5
2.5VV
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
Typical Characteristics
BD675A/677A/679A/681
10000
1000
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
VCE = 3V
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
[A], COLLECTOR CURRENT
C
0.6
I
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VBE[V], BASE-EMITTER VOLTAGE
VCE = 3V
Ic = 250 I
2.4
2.0
1.6
1.2
0.8
(sat)[V], SATURATION VOLTAGE
0.4
CE
V
0.0
0.1 1 10
B
IC[A], COLLECTOR CURRENT
DC
BD675A
BD677A
BD679A
BD681
10µs
100µs
1ms
10ms
10
IC(max). Pulsed
IC(max). Continuous
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
50
40
30
20
10
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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