Fairchild Semiconductor BD380, BD378, BD376 Datasheet
BD376/378/380
Medium Power Linear and Switching
Applications
• Complement to BD375, BD377 and BD379 respectively
BD376/378/380
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
TO-126
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : BD376
: BD378
: BD380
Collector-Emitter Voltage : BD376
: BD378
: BD380
- 50
- 75
- 100
- 45
- 60
- 80
Emitter-Base Voltage - 5 V
Collector Current (DC) - 2 A
*Collector Current (Pulse) - 3 A
Base Current - 1 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaini ng Voltage
CEO
: BD376
: BD378
: BD380
BV
CBO
Collector-Base : BD376
Breakdown Voltage : BD378
: BD380
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) *Collector-Emitter Saturat ion Voltage IC = - 1A, IB = - 0.1A - 1 V
CE
(on) *Base-Emitter ON V oltag e V
V
BE
t
ON
t
OFF
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
Collector Cut-off Current : BD376
: BD378
: BD380
Emitter Cut-off Current V
*DC Current Gain V
Turn ON Time V
Turn OFF Ti me 500 ns
= - 100mA, IB = 0 - 45
I
C
- 60
- 80
IC = - 100µA, IE = 0 - 50
- 75
- 100
= - 45V, IE = 0
V
CB
= - 60V, IE = 0
V
CB
V
= - 80V, IE = 0
CB
= - 5V , IC = 0 - 100 µA
EB
= - 2V, IC = - 0.15A
CE
= - 2V, IC = - 1A
V
CE
= - 2V, IC = -1A - 1.5 V
CE
= - 30V, IC = - 0.5A
CC
= - IB2 = - 0.05A
I
B1
R
= 60Ω
L
40
20
50 ns
- 2
- 2
- 2
375
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
hFE Classificntion
Classification6 101625
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375
Typical Characteristics
BD376/378/380
100
80
60
40
, DC CURRENT GAIN
FE
h
20
0
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
BE
V
Ic = 10.I
(sat)
B
VBE(on)
V
CE
= -5V
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
(V), BASE EMITTER VOLTAGE
-0.3
BE
V
-0.2
-0.1
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VCE = -2V
-500
-400
-300
-200
-100
(sat)(mV), SATURATION VOLTAGE
CE
V
-0
-1E-3 -0.01 -0.1 -1 -10
IC = 20.I
B
IC = 10.I
B
IC[A], COLLECTOR CURRENT
-10
ICMAX. (Continuous)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
S/b LIMITED
MAX.
BD378
BD380
BD376
CEO
V
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
Tc[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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