Fairchild Semiconductor BD379, BD377 Datasheet
BD375/377/379
Medium Power Linear and Switching
Applications
• Complement to BD376, BD378 and BD380 respectively
BD375/377/379
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
TO-126
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
ICP
IB
P
C
TJ
T
STG
Electrical Characteristics
Collector-Base Voltage : BD375
: BD377
: BD379
Collector-Emitter Voltage : BD375
: BD377
: BD379
50
75
100
45
60
80
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 3 A
Base Current 1 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
: BD375
: BD377
: BD379
BVCBO
Collector-Base : BD375
Breakdown Voltage : BD377
: BD379
ICBO
Collector Cut-off Current : BD375
: BD377
: BD379
IEBO
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 1 V
CE
(on) * Base-Emitter ON Voltage V
V
BE
t
ON
t
OFF
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
Emitter Cut-off Current V
* DC Current Gain V
Turn ON Time V
Turn OFF Time 500 ns
= 100mA, IB = 0 45
I
C
60
80
IC = 100µA, IE = 0 50
75
100
V
= 45V, IE = 0
CB
= 60V, IE = 0
V
CB
V
= 80V, IE = 0
CB
= 5V, IC = 0 100 µA
EB
= 2V, IC = 0.15A
CE
= 2V, IC = 1A
V
CE
= 2V, IC = 1A 1.5 V
CE
= 30V, IC = 0.5A
CC
= - IB2 = 0.05A
I
B1
R
= 60Ω
L
40
20
50 ns
2
2
2
375
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
hFE Classification
Classification 6 10 16 25
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375
Typical Characteristics
BD375/377/379
100
80
60
40
, DC CURRENT GAIN
FE
h
20
0
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
(V), BASE EMITTER VOLTAGE
0.3
BE
V
0.2
0.1
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
BE
V
Ic = 10.I
(sat)
V
B
(on)
BE
= 5V
CE
V
VCE = -2V
500
400
300
200
100
(sat)(mV), SATURATION VOLTAGE
CE
V
0
1E-3 0.01 0.1 1 10
B
= 20 . I
C
I
B
= 10.I
C
I
IC[A], COLLECTOR CURRENT
10
ICMAX. (Continuous)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
S/b LIMITED
BD375
BD377
BD379
MAX.
CEO
V
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175 200
Tc[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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