Fairchild Semiconductor BD243C, BD243, BD243A Datasheet
BD243/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD244, BD244A, BD244B and BD244C respectively
BD243/A/B/C
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current (DC) 6 A
*Collector Current (Pulse) 10 A
Base Current 2 A
Collector Dissipation (TC=25°C) 65 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
(sus) * Collector-Emitter Sustaini ng Voltage
V
CEO
I
CEO
I
CES
I
EBO
h
FE
(sat) *Collector-Emitter Saturation Vol tage IC = 6A, IB = 1A 1.5 V
V
CE
(on) *Base-Emitter ON Voltage V
V
BE
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
Collector Cut-off Curre nt : BD243/24 3A
Collector Cut-off Current : BD243
Emitter Cut-off Current V
*DC Current Gain V
TC=25°C unless otherwise noted
: BD243
: BD243A
: BD243B
: BD243C
: BD243
: BD243A
: BD243B
: BD243C
TC=25°C unless otherwise noted
: BD243
: BD243A
: BD243B
: BD243C
: BD243B/243C
: BD243A
: BD243B
: BD243C
45
60
80
100
45
60
80
100
=30mA, IB=0
I
C
45
60
80
100
V
= 30V, IB = 0
CE
= 60V, IB = 0
V
CE
V
= 45V, V
CE
V
= 60V, V
CE
= 80V, V
V
CE
= 100V, V
V
CE
= 5V , IC = 0 1 mA
EB
= 4V , IC = 0.3A
CE
V
= 4V , IC = 3A
CE
= 4V , IC = 6A 2 V
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
30
15
0.7
0.7
0.4
0.4
0.4
0.4
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
BD243/A/B/C
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1
0.1
(sat)(V), SATURATION VOLTAGE
BE
V
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 10.1 I
VCE = 2V
B
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
(sat)(V), SATURATION VOLTAGE
0.7
BE
V
0.6
0.5
0.1 1 10
IC = 10.1 I
B
IC[A], COLLECTOR CURRENT
100
IC(max)
10
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
1
m
10
s
m
s
DC
BD243
BD243A
BD243B
BD243C
10µs
100µs
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175 200
T[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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