Fairchild Semiconductor BD241C, BD241A, BD241 Datasheet
BD241/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD242/A/B/C respectively
BD241/A/B/C
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
C
ICP
IB
P
T
T
CEO
CER
EBO
C
J
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current (DC) 3 A
*Collector Current (Pulse) 5 A
Base Current 1 A
Collector Dissipation (TC=25°C) 40 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustain ing Voltage
CEO
I
CEO
ICES
IEBO
hFE
(sat) * Collector-Emitter Saturat ion Voltage IC = 3A, IB = 0.6A 1.2 V
VCE
(on) * Base-Emitter ON Vol tage V
V
BE
* Pulse Test: PW=350µs, duty Cycle≤2% Pulsed
Collector Cut-off Current : BD241/A
Collector Cut-off Current : BD241
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
: BD241
: BD241A
: BD241B
: BD241C
: BD241
: BD241A
: BD241B
: BD241C
TC=25°C unless otherwise noted
: BD241
: BD241A
= - 30mA, IB = 0
I
C
: BD241B
: BD241C
V
= 30V, IB = 0
: BD241B/C
: BD241A
: BD241B
: BD241C
CE
V
= 60V, IB = 0
CE
V
= 45V, V
CE
= 60V, V
V
CE
= 80V, V
V
CE
V
= 100V, V
CE
= 5V, IC = 0 1 m A
EB
= 4V, IC = 1A
CE
= 4V, IC = 3A
V
CE
= 4V, IC = 3A 1.8 V
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
45
60
80
100
55
70
90
115
45
60
80
100
0.3
0.3
0.2
0.2
0.2
0.2
25
10
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
BD241/A/B/C
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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