Fairchild Semiconductor BD240A, BD240, BD240C Datasheet
BD240/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD239/A/B/C respectively
BD240/A/B/C
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CEO
V
CER
VEBO
I
C
ICP
IB
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage - 5 V
Collector Current (DC) - 2 A
*Collector Current (Pulse) - 4 A
Base Current - 0.6 A
Collector Dissipation ( TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Vo ltag e
CEO
I
CEO
I
CES
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = - 1A , IB = - 0.2A - 0.7 V
V
CE
(on) * Base-Emitter ON Vo ltage V
V
BE
* Pulse Test: PW=350µs, duty Cycle≤2.0% Pulsed
Collector Cut-off Current : BD240/A
Collector Cut-off Current : BD240
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
: BD240
: BD240A
: BD240B
: BD240C
: BD240
: BD240A
: BD240B
: BD240C
TC=25°C unless otherwise noted
: BD240
: BD240A
= - 30mA, IB = 0 - 45
I
C
: BD240B
: BD240C
V
= - 30V, IB = 0
: BD240B/C
: BD240A
: BD240B
: BD240C
CE
V
= - 60V, IB = 0
CE
V
= - 45V, V
CE
= - 60V, V
V
CE
= - 80V, V
V
CE
V
= - 100V, V
CE
= - 5V, IC = 0 - 1 mA
EB
= - 4V ,IC = - 0.2A
CE
= - 4V , IC = - 1A
V
CE
= - 4V , IC = - 1A - 1.3 V
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
- 45
- 60
- 80
- 100
- 55
- 70
- 90
- 115
- 60
- 80
- 100
- 0.3
- 0.3mAmA
- 0.2
- 0.2
- 0.2
- 0.2
40
15
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
BD240/A/B/C
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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