Fairchild Semiconductor BD239C, BD239A, BD239 Datasheet
BD239/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD240/A/B/C respectively
BD239/A/B/C
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CEO
V
CER
VEBO
I
C
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
45
60
80
100
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
55
70
90
115
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 4 A
Base Current 0.6 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
: BD239
: BD239A
= 30mA, IB = 0
I
C
: BD239B
: BD239C
I
CEO
Collector Cut-off Current
: BD239/A
: BD239B/C
ICES
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
IEBO
hFE
(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.7 V
VCE
(on) *Base-Emitter ON Voltage V
V
BE
* Pulse Test: PW=350µs, duty Cycle≤2.0% Pulsed
Emitter Cut-off Current V
*DC Current Gain V
= 30V, IB = 0
V
CE
V
= 60V, IB = 0
CE
= 45V, V
V
CE
V
= 60V, V
CE
= 80V, V
V
CE
= 100V, V
V
CE
= 5V, IC = 0 1 mA
EB
= 4V, IC = 0.2A
CE
V
= 4V, IC = 1A
CE
= 4V, IC = 1A 1.3 V
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
45
60
80
100
0.3
0.3
0.2
0.2
0.2
0.2
40
15
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
BD239/A/B/C
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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