Fairchild Semiconductor BCW61C, BCW61B, BCW61A Datasheet

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR

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GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

V
V
V
I
P
T

CBO
CEO
EBO

C

C
STG

-32

-32

-5.0

-100
350

-55 ~ 150

• Refer to KS5086 for graphs

ELECTRICAL CHARACTERISTICS (TA=25°°C)

Characteristic Symbol Test Conditions Min Max Unit

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain

: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D
: BCW61A
: BCW61B
: BCW61C
: BCW61D

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage

Output Capacitance
Noise Figure
Turn On Time

Turn Off Time

BV

CEO

BV

EBO

I

CES

h

FE

V

(sat)

CE

V

(sat)

BE

V

(on)

BE

C

OB

NF
t

ON

t

OFF

SOT-23

V
V
V

mA

mW

°C

IC= -2mA, IB=0
IE= -1µA, IC=0
VCB= -32V, VBE=0

VCE= -5V, IC= -10µA

VCE= -5V, IC= -2mA

VCE= -5V, IC= -50mA

IC= -50mA, IB= -1.25mA
IC= -10mA, IB= -0.25mA
IC= -50mA, IB= -1.25mA
IC= -10mA, IB= -0.25mA
VCE= -5V, IC= -2mA
VCB= -10V, IE=0
f=1MHz
IC= -0.2mA, VCE= -5V
RG=20KΩ, f=1KHz
IC= -10mA, IB1= -1mA
VBB= -3.6V, IB2= -1mA
R1=R2=50KΩ, RL=990Ω

1. Base 2. Emitter 3. Collector

-32

-5

-20

20

40
100
120
140
250
380

220
310
460

630
60
80

100
100

-0.55

0.68

0.6

0.6

-0.25

1.05

0.85

0.75
6

6

150
800

V
V

nA

V
V
V
V
V

pF
dB

ns
ns

Rev. B

1999 Fairchild Semiconductor Corporation

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR

MARKING CODE

TYPE BCW61A BCW61B BCW61C BCW61D

MARK. BA BB BC BD