DYNEX DCR1021SF65, DCR1021SF64, DCR1021SF63, DCR1021SF62, DCR1021SF61 Datasheet

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DYNEX DCR1021SF65, DCR1021SF64, DCR1021SF63, DCR1021SF62, DCR1021SF61 Datasheet

DCR1021SF

DCR1021SF

Phase Control Thyristor

Target Information

DS5436-1.0 March 2001

FEATURES

KEY PARAMETERS

 

Double Side Cooling

VDRM

 

6500V

High Surge Capability

IT(AV)

(max)

840A

ITSM

(max)

14000A

 

Low Inductance Internal Construction

dV/dt

 

1000V/ s

 

dI/dt

 

100A/ s

APPLICATIONS

High Power Converters

DC Motor Control

High Voltage Power Supplies

VOLTAGE RATINGS

 

 

Part and Ordering

Repetitive Peak

Conditions

 

Number

Voltages

 

 

 

VDRM and VDRM

 

 

 

V

 

 

DCR1021SF65

6500

Tvj = 0˚ to 125˚C,

 

DCR0121SF64

6400

IDRM = IRRM = 150mA,

 

DCR1021SF63

6300

VDRM, VRRM tp = 10ms,

Outline type code: F

DCR1021SF62

6200

VDSM & VRSM =

DCR1021SF61

6100

VDRM & VRRM + 100V

 

DCR1021SF60

6000

respectively

(See Package Details for further information)

Lower voltage grades available.

 

Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table.

For example:

DCR1021SF63

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

1/11

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DCR1021SF

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

Max.

Units

 

 

 

 

 

Double Side Cooled

 

 

 

 

 

 

 

 

IT(AV)

Mean on-state current

Half wave resistive load

840

A

IT(RMS)

RMS value

-

1320

A

IT

Continuous (direct) on-state current

-

1230

A

Single Side Cooled

 

 

 

 

 

 

 

 

IT(AV)

Mean on-state current

Half wave resistive load

610

A

IT(RMS)

RMS value

-

960

A

IT

Continuous (direct) on-state current

-

845

A

 

 

 

 

 

Tcase = 80˚C unless stated otherwise.

 

 

 

 

 

 

 

 

Symbol

Parameter

Test Conditions

Max.

Units

 

 

 

 

 

Double Side Cooled

 

 

 

 

 

 

 

 

IT(AV)

Mean on-state current

Half wave resistive load

670

A

IT(RMS)

RMS value

-

1050

A

IT

Continuous (direct) on-state current

-

960

A

 

 

 

 

 

Single Side Cooled

 

 

 

 

 

 

 

 

IT(AV)

Mean on-state current

Half wave resistive load

480

A

IT(RMS)

RMS value

-

750

A

IT

Continuous (direct) on-state current

-

650

A

 

 

 

 

 

2/11

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DCR1021SF

SURGE RATINGS

Symbol

Parameter

 

 

Test Conditions

Max.

Units

 

 

 

 

 

 

ITSM

Surge (non-repetitive) on-state current

10ms half sine, Tcase = 125˚C

 

11.0

kA

I2t

I2t for fusing

V

R

= 50% V - 1/4 sine

0.6 x 106

A2s

 

 

 

RRM

 

 

 

 

 

 

 

 

ITSM

Surge (non-repetitive) on-state current

10ms half sine, Tcase = 125˚C

14.0

kA

I2t

I2t for fusing

 

 

VR = 0

0.98 x 106

A2s

 

 

 

 

 

 

 

 

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

Min.

Max.

Units

 

 

 

 

 

 

 

Rth(j-c)

Thermal resistance - junction to case

Double side cooled

DC

-

0.022

˚CW

 

 

Single side cooled

Anode DC

-

0.38

˚CW

 

 

 

 

 

 

 

 

 

 

Cathode DC

-

0.52

˚CW

 

 

 

 

 

 

 

Rth(c-h)

Thermal resistance - case to heatsink

Clamping force 19.5kN

Double side

-

0.004

˚CW

 

 

(with mounting compound)

Single side

-

0.008

˚CW

 

 

 

 

 

 

 

Tvj

Virtual junction temperature

On-state (conducting)

 

-

135

˚C

 

 

Reverse (blocking)

 

-

125

˚C

 

 

 

 

 

 

 

Tstg

Storage temperature range

 

 

–55

125

˚C

Fm

Clamping force

 

 

18.0

22.0

kN

3/11

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DCR1021SF

SURGE RATINGS

Symbol

Parameter

Test Conditions

Min.

Max.

Units

 

 

 

 

 

 

 

IRRM/IRRM

Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125˚C

-

150

mA

dV/dt

Max. linear rate of rise of off-state voltage

To 67% VDRM, Tj = 125˚C

 

-

1000

V/µ

s

 

 

 

 

 

 

 

 

dI/dt

Rate of rise of on-state current

From 67% VDRM,

Repetitive 50Hz

-

30

A/µ

s

 

 

Gate source 30V, 15Ω ,

 

 

 

 

 

 

 

Non-repetitive

-

100

A/µ

s

 

 

tr ≤ 0.5µ s, Tj = 125˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

VT(TO)

Threshold voltage

At Tvj = 125˚C

 

-

1.2

V

 

rT

On-state slope resistance

At Tvj = 125˚C

 

-

0.98

mΩ

 

tgd

Delay time

VD = 67% VDRM, gate source 30V, 15Ω

0.5

1.5

µ s

 

 

tr = 0.5µ s, Tj = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

tq

Turn-off time

IT = 1000A, tp = 1ms, Tj =125˚C,

1500

-

µ s

 

 

VR = 100V, dIRR/dt = 10A/µ s,

 

 

 

 

 

 

VDR = 67% VDRM,

 

 

 

 

 

 

 

dVDR/dt = 20V/µ s linear

 

 

 

 

 

 

 

 

 

 

 

 

IL

Latching current

Tj = 25˚C, VD = 10V

 

-

600

mA

 

 

 

 

 

 

 

IH

Holding current

Tj = 25˚C, VG–K = ∞

 

-

200

mA

 

 

 

 

 

 

 

 

4/11

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