Datasheet STTH1L06U, STTH1L06, STTH1L06A Datasheet (SGS Thomson Microelectronics)

®

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

MAIN PRODUCT CHARACTERISTICS

STTH1L06/U/A

I

F(AV)

V

RRM

(max) 75 µA

I

R

1A

600 V

Tj (max) 175 °C

(max) 1.05 V

V

F

trr (max) 80 ns

FEATURES AND BENEFITS

Ultrafast switching

■

■ Low reverse recovery current

Reduces switching & conduction losses

■

Low thermal resistance

■

DESCRIPTION

The STTH1L06/U/A, which is using ST Turbo 2
600V technology, is specially suited as boost
diode in discontinuous or critical mode power
factor corrections.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.

DO-41

STTH1L06

SMB

STTH1L06U

SMA

STTH1L06A

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

Repetitive peak reverse voltage 600 V
RMS forward current DO-41

SMA / SMB

Average forward current Tl = 120°C δ = 0.5 DO-41

TI = 135°C δ = 0.5 SMA
TI = 145°C δ = 0.5 SMB

Surge non repetitive forward
current

tp = 10 ms Sinusoidal DO-41
tp = 10 ms Sinusoidal SMA / SMB

10

7
1

1
1

30
20

Storage temperature range - 65 + 175 °C

Tj Maximum operating junction temperature + 175 °C

July 2002 - Ed: 3C

A

A

A

1/8

STTH1L06/U/A

THERMAL PARAMETERS

Symbol Parameter Maximum Unit

R

th (j-l)

Junction to lead L = 10 mm DO-41 45 °C/W

SMA 30
SMB 25

R

th (j-a)

Note 1: Rth(j-a)is measured with a copper areaS=5cm2(see Fig 12)

Junction to ambient (note 1) L = 10 mm DO-41 70

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

R

V

Reverse leakage
current

Forward voltage drop IF= 1 A Tj = 25°C 1.3 V

F

VR= 600V Tj = 25°C 1 µA

Tj = 150°C 10 75

Tj = 150°C 0.85 1.05

To evaluate the maximum conduction losses use the following equation :
P=0.89xI

F(AV)

+ 0.165 I

F2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

trr Reverse recovery

time

tfr Forward recovery

time

V

FP

Forward recovery
voltage

=1A dIF/dt=-50A/µs

I

F

Tj = 25°C 55 80 ns

VR= 30V
I

=1A dIF/dt = 100 A/µs

F

Tj = 25°C 50 ns

VFR= 3.5V
IF=1A dIF/dt = 100 A/µs Tj = 25°C 10 V

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STTH1L06/U/A

Fig.1: Conductionlossesversus average current.

P(W)

1.50

δ = 0.05

1.25

1.00

0.75

0.50

0.25

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

δ = 0.1

δ = 0.2

IF(av)(A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads = 10mm)

Zth(j-a)/Rth(j-a)

1.0

DO-41

Lleads = 10mm

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ

=tp/T

T

tp

Fig. 2: Forward voltage drop versus forward
current.

IFM(A)

100.0

Tj=150°C

Tj=150°C

(Maximum values)

10.0

(Maximum values)

Tj=150°C

Tj=150°C

(Typical values)

(Typical values)

Tj=25°C

1.0

(Maximum values)

VFM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Fig. 3-2: Relative variation of thermal impedance

junction ambient versus pulse duration (epoxy
FR4, S = 1cm²)

Zth(j-a)/Rth(j-a)

1.0

SMB

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

δ = 0.1

0.2

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ

=tp/T

T

tp

Fig. 3-3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4)

Zth(j-a)/Rth(j-a)

1.0

SMA

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

δ = 0.1

0.2

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

δ

=tp/T

T

tp

Fig. 4: Peak reverse recovery current versus

/dt (90% confidence).

dI

F

IRM(A)

2.5

VR=400V
Tj=125°C

2.3

2.0

1.8

1.5

1.3

IF=0.25 x IF(av)IF=0.25 x IF(av)

1.0

0.8

0.5

0.3

0.0
0 5 10 15 20 25 30 35 40 45 50

IF=0.5 x IF(av)IF=0.5 x IF(av)

IF=IF(av)IF=IF(av)

dIF/dt(A/µs)

IF=2 x IF(av)IF=2 x IF(av)

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STTH1L06/U/A

Fig. 5: Reverse recovery time versus dIF/dt

(90% confidence).

trr(ns)

800

700

600

500

400

300

200

100

0

0 5 10 15 20 25 30 35 40 45 50

IF=2 x IF(av)IF=2 x IF(av)

IF=IF(av)IF=IF(av)

dIF/dt(A/µs)

IF=0.5 x IF(av)IF=0.5 x IF(av)

VR=400V
Tj=125°C

Fig. 7: Softness factor versus dIF/dt (typical
values).

S factor

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 5 10 15 20 25 30 35 40 45 50

dIF/dt(A/µs)

IF=IF(av)
VR=400V
Tj=125°C

Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).

Qrr(nC)

220

VR=400V

200

Tj=125°C

180
160
140
120
100

80
60
40
20

0

0 5 10 15 20 25 30 35 40 45 50

dIF/dt(A/µs)

IF=2 x IF(av)

IF=IF(av)

IF=0.5 x IF(av)

Fig. 8: Relative variations of dynamic
parameters versus junction temperature.

1.25

1.00

0.75

0.50

0.25

0.00
25 50 75 100 125

S factor

IRM

QRR

Tj(°C)

IF=IF(av)
VR=400V

Reference: Tj=125°C

Fig. 9: Transient peak forward voltage versus

/dt (90% confidence).

dI

F

VFP(V)

25

IF=IF(av)
Tj=125°C

20

15

10

5

dIF/dt(A/µs)

0

0 20 40 60 80 100 120 140 160 180 200

4/8

Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).

tfr(ns)

200
180
160
140
120
100

80
60
40
20

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

IF=IF(av)

VFR=1.1 x VF max.

Tj=125°C

STTH1L06/U/A

Fig. 11: Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

100

10

F=1MHz

Vosc=30mV

Tj=25°C

VR(V)

1

1 10 100 1000

Fig. 12-2: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy
printedcircuitboard FR4, copperthickness:35µm).

Rth(j-a)(°C/W)

140
130
120
110
100

90
80
70
60
50
40
30
20
10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(cm²)

SMA

Fig. 12-1: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy
printedcircuitboard FR4, copperthickness:35µm).

Rth(j-a)(°C/W)

110
100

90
80
70
60
50
40
30
20
10

0

012345678910

DO-41

Lleads=10mm

SMB

S(cm²)

5/8

STTH1L06/U/A

PACKAGE MECHANICAL DATA

SMA

DIMENSIONS

C

FOOTPRINT

E1

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065

E

A1

A2

L

b

c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063

1.65

6/8

1.45 1.45

2.40

PACKAGE MECHANICAL DATA

SMB

STTH1L06/U/A

DIMENSIONS

C

FOOTPRINT

E1

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

E

c 0.15 0.41 0.006 0.016

A1

A2

L

b

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063

2.3

1.52 2.75

1.52

7/8

STTH1L06/U/A

PACKAGE MECHANICAL DATA

DO-41

DIMENSIONS

CA

O

O

/

D

/

C

D

BO

/

REF.

A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
C 28 1.102
D 0.712 0.863 0.028 0.034

Millimeters Inches

Min. Max. Min. Max.

Ordering code Marking Package Weight Base qty Delivery mode

STTH1L06 STTH1L06 DO-41 0.34 g 2000 Ammopack

STTH1L06RL STTH1L06 DO-41 0.34 g 5000 Tape & reel

STTH1L06U BL6 SMB 0.11g 2500 Tape & reel
STTH1L06A HL6 SMA 0.068 g 5000 Tape & reel

■

Epoxy meets UL 94,V0

■

Band indicated cathode

■

Bending method: Application note AN1471

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