Datasheet STTH1002C-Y Datasheet (ST)

STTH1002C-Y

Automotive high efficiency ultrafast diode

Features

■ Suited for SMPS

■ Low losses

■ Low forward and reverse recovery times

■ High junction temperature

■ Low leakage current

■ AEC-Q101 qualified

Description

Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters.

Packaged in DPAK and D intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications.

2

PAK, this device is

A1

A2

K

A2

K

A1

DPAK

STTH1002CBY

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

V

(typ) 0.78 V

F

(typ) 20 ns

t

rr

K

A2

A1

D2PAK

STTH1002CGY

Up to 2 x 8 A

200 V

November 2011 Doc ID 17536 Rev 2 1/9

www.st.com

9

Characteristics STTH1002C-Y

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RRM

2

PA K

Forward rms current

D

DPAK 10

= 155 °C Per diode 5

T

c

T

= 150 °C Per device 10

Avarage forward current δ = 0.5

Surge non repetitive forward current tp = 10 ms sinusoidal 50 A

FSM

Storage temperature range -65 to + 175 °C

stg

Operating junction temperature range -40 to + 175 °C

T

j

c

T

= 135 °C Per diode 8

c

= 125 °C Per device 16

T

c

20

Symbol Parameter Value (max) Unit

Per diode 4.0

R

Junction to case

th(j-c)

Coupling 1.0

th(j-c)

°C/WPer device 2.5

A

When the diodes 1 and 2 are used simultaneously: Δ T

(diode1) = P(diode1) x R

j

Table 4. Static electrical characteristics (per diode)

(per diode) + P(diode2) x R

th(j-c)

th(c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop

F

Tj = 25 °C

VR = V

= 125 °C 3 40

T

j

T

= 25 °C IF = 5 A 1.1

j

T

= 25 °C IF = 10 A 1.25

j

= 150 °C IF = 5 A 0.78 0.89

T

j

T

= 150 °C IF = 10 A 1.05

j

RRM

5

To evaluate the conduction losses use the following equation: P = 0.73 x I

F(AV)

+ 0.032 I

F2(RMS)

µA

V

2/9 Doc ID 17536 Rev 2

STTH1002C-Y Characteristics

Table 5. Dynamic electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 1 A VR = 30 V

I

Reverse recovery time Tj = 25 °C

t

rr

F

dIF/dt = 100 A/µs

20 25 ns

Reverse recovery

I

RM

current

t

Forward recovery time Tj = 25 °C

fr

V

Forward recovery

FP

voltage

= 125 °C

T

j

T

= 25 °C IF = 5 A dIF/dt = 100 A/µs 2.4 V

j

I

= 5 A VR = 160 V

F

dIF/dt = 200 A/µs

= 5 A dIF/dt = 100 A/µs

I

F

= 1.1 x V

V

FR

Fmax

5.9 7.6 A

110 ns

Doc ID 17536 Rev 2 3/9

Characteristics STTH1002C-Y

Figure 1. Peak current versus duty cycle

(per diode)

I (A)

M

60

50

40

30

20

10

P = 2W

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 10W

P = 5W

δ

I

M

δ

T

=tp/T

Figure 3. Forward voltage drop versus

forward current (maximum values, per diode)

I (A)

FM

100

90

80

70

60

T =150°C

50

40

30

20

10

0

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00

j

V (V)

FM

T =25°C

j

Figure 5. Junction capacitance versus

reverse voltage applied (typical values, per diode)

C(pF)

100

V (V)

10

0 50 100 150 200

R

F=1MHz

V =30mV

OSC RMS

T =25°C

j

Figure 2. Forward voltage drop versus

forward current (typical values, per diode)

I (A)

FM

100

90

80

70

60

50

40

tp

30

20

10

0

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00

T =150°C

j

V (V)

FM

T =25°C

j

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

t (s)

0.1

1.E-03 1.E-02 1.E-01 1.E+00

p

Figure 6. Reverse recovery charges versus

dI

/dt (typical values, per diode)

F

Q (nC)

rr

240

I =5A

F

220

V =160V

R

200

180

160

140

120

100

80

60

40

20

0

10 100 1000

T =125°C

j

dI /dt(A/µs)

F

T =25°C

j

4/9 Doc ID 17536 Rev 2

STTH1002C-Y Characteristics

Figure 7. Reverse recovery time versus dI

(typical values, per diode)

t (ns)

rr

80

I =5A

F

V =160V

R

70

60

50

40

30

20

10

0

10 100 1000

T =125°C

j

dI /dt(A/µs)

F

T =25°C

j

Figure 9. Dynamic parameters versus

junction temperature

Q;rrI [T ]/Q ;I [T =125°C]

RM j rr RM j

1.4

I =5A

F

V =160V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

RM

Q

rr

T (°C)

j

/dt

Figure 8. Peak reverse recovery current

F

versus dI

/dt

F

(typical values, per diode)

I (A)

RM

13

I =5A

F

12

V =160V

R

11

10

9

8

7

6

5

4

3

2

1

0

10 100 1000

T =125°C

j

dI /dt(A/µs)

F

Figure 10. Thermal resistance junction to

ambient versus copper surface under tab for D

R (°C/W)

th(j-a)

80

Epoxy printed circuit board FR4, copper thickness = 35 µm

70

60

50

40

30

20

10

0

02468101214161820

S(Cu)(cm²)

2

PAK

T =25°C

j

Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy

printed circuit board FR4, copper thickness = 35 µm) for DPAK

R (°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

0 2 4 6 8 10 12 14 16 18 20

S(Cu)(cm²)

Doc ID 17536 Rev 2 5/9

Package mechanical data STTH1002C-Y

2 Package mechanical data

● Epoxy meets UL94, V0

● Cooling method: by conduction (method C)

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 6. DPAK dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 2.20 2.40 0.086 0.094

E

B2

L2

H

L4

B

G

A1

A

C2

R

D

R

C

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023

C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

0.60 MIN.

A2

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

V2

L2 0.80 typ. 0.031 typ.

Figure 12. Footprint (dimensions in mm)

6.7 3 3

6.7

6/9 Doc ID 17536 Rev 2

L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

1.6

2.3

1.6

STTH1002C-Y Package mechanical data

m

D

Table 7. D

L2

L

L3

2

PAK dimensions

E

A1

B2

B

G

* FLAT ZONE NO LESS THAN 2m

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A

C2

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

C

R

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

A2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

M

*

V2

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Figure 13. Footprint (dimensions in mm)

16.90

10.30

8.90

5.08

1.30

3.70

Doc ID 17536 Rev 2 7/9

Ordering information STTH1002C-Y

3 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STTH1002CBY-TR STTH1002CY DPAK 0.3 g 2500

STTH1002CGY-TR STTH1002CGY D2PAK 1.48 g 1000

4 Revision history

Table 9. Document revision history

21-Oct-2010 1 First issue.

03-Nov-2011 2 Updated Ta bl e 7 and Table 8.

Date Revision Changes

Tape and reel

8/9 Doc ID 17536 Rev 2

STTH1002C-Y

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Doc ID 17536 Rev 2 9/9