Zetex (Now Diodes) BFN16 Schematic [ru]

SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR

ISSUE 3 - OCTOBER 1995 ✪

BFN16

C

COMPLEMENTARY TYPE - BFN17
PARTMARKING DETAILS - DD

ABSOLUTE MAXIMUM RATINGS.

C

B

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTER ISTIC S (at T

amb

CBO
CEO

EBO
CM
C
B

tot

j:Tstg

= 25°C).

250 V
250 V

5V
500 mA
200 mA
100 mA

1W

-65 to +150 °C

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base Breakdown

Voltage
Collector Cut-Off Current I

Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter Saturation

Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Output Capacitance C

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

h

FE

T

obo

250 V

I

=100µA

C

250 V IC=1mA

5V

100
20

nA
µA

I

=100µA

E

VCB=250V
V

=250V, T

CB

amb

=150 °C

100 nA VEB=3V

0.4 V IC=20mA, IB=2mA

0.9 V IC=20mA, IB=2mA

25
40
40

IC=1mA,VCE=10V*
I

=10mA, VCE=10V

C

I

=30mA, VCE=10V

C

Typ.70 MHz IC=20mA, VCE=10V*

f=20MHz

Typ.1.5 pF VCB=30V,f=1MHz

E

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