WTE BY133-TB, BY133-T3, BY133 Datasheet

				W T E	BY133
			PO WE R SEM IC O ND U C TO RS
					1.0A SILICON RECTIFIER

Features

!Diffused Junction

!Low Forward Voltage Drop

!

High Current Capability

A

B

A

!

High Reliability

!

High Surge Current Capability

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.35 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

C

		D
	DO-41
Dim	Min	Max
A	25.4	—
B	4.06	5.21
C	0.71	0.864
D	2.00	2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

	Characteristic		Symbol	BY133	Unit
	Peak Repetitive Reverse Voltage		VRRM
	Working Peak Reverse Voltage		VRWM	1300	V
	DC Blocking Voltage		VR
	RMS Reverse Voltage		VR(RMS)	910	V
	Average Rectified Output Current (Note 1)	@TA = 75°C	IO	1.0	A
	Non-Repetitive Peak Forward Surge Current 8.3ms Single		IFSM	30	A
	half sine-wave superimposed on rated load (JEDEC Method)
	Forward Voltage	@IF = 1.0A	VFM	1.0	V
	Peak Reverse Current	@TA = 25°C	IRM	5.0	µA
	At Rated DC Blocking Voltage	@TA = 100°C		50
	Typical Junction Capacitance (Note 2)		Cj	15	pF
	Typical Thermal Resistance Junction to Ambient (Note 1)		R JA	50	K/W
	Operating Temperature Range		Tj	-65 to +125	°C
	Storage Temperature Range		TSTG	-65 to +150	°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

BY133

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