WTE BAV21W-T3, BAV21W-T1, BAV19W-T3, BAV20W-T3, BAV20W-T1 Datasheet

				WTE	BAV19W – BAV21W
			POWER SEMICONDUCTORS
					SURFACE MOUNT FAST SWITCHING DIODE

Features

!High Conductance

!

Fast Switching Speed

A

! Surface Mount Package Ideally Suited for

SOD-123

Automatic Insertion

Dim

Min

Max

!

For General Purpose Switching Application

C

A

3.6

3.9

! Plastic Material – UL Recognition Flammability

D

B

2.5

2.8

Classification 94V-O

B

C

1.4

1.8

D

0.5

0.7

E

E

—

0.2

G

0.4

—

Mechanical Data

H

H

0.95

1.35

! Case: SOD-123, Molded Plastic

G

J

—

0.12

!

Terminals: Plated Leads Solderable per

J

All Dimensions in mm

MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.01 grams (approx.)

! Marking: BAV19W	A8
BAV20W	A80
BAV21W	A82

Maximum Ratings @TA=25°C unless otherwise specified

Characteristic		Symbol	BAV19W	BAV20W	BAV21W	Unit
Non-Repetitive Peak Reverse Voltage		VRM	120	200	250	V
Peak Repetitive Reverse Voltage		VRRM
Working Peak Reverse Voltage		VRWM	100	150	200	V
DC Blocking Voltage		VR
RMS Reverse Voltage		VR(RMS)	70	105	140	V
Forward Continuous Current (Note 1)		IFM		400		mA
Average Rectified Output Current (Note 1)		IO		200		mA
Non-Repetitive Peak Forward Surge Current	@ t = 1.0ms	IFSM		2.5		A
	@ t = 1.0s			0.5
Power Dissipation		Pd		410		mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)		R JA		500		K/W
Operating and Storage Temperature Range		Tj, TSTG		-65 to +150		°C
Electrical Characteristics @TA=25°C unless otherwise specified

Characteristic		Symbol	BAV19W	BAV20W	BAV21W	Unit
Forward Voltage Drop	@ IF = 100mA	VFM		1.0		V
Peak Reverse Leakage Current		IRM	100	150	200	nA
At Rated DC Blocking Voltage
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)		Cj		5.0		pF
Reverse Recovery Time (Note 2)		trr		50		nS

Note: 1.	Valid provided that terminals are kept at ambient temperature.
2.	Measured with IF = IR = 30mA, IRR = 0.1 x IR, RL = 100 .
BAV19W – BAV21W		1 of 3	© 2002 Won-Top Electronics