WTE 1A7-TB, 1A7-T3, 1A7, 1A6-TB, 1A6-T3 Datasheet

				WTE	1A1 – 1A7
			POWER SEMICONDUCTORS
					1.0A MINIATURE SILICON RECTIFIER

Features

!Diffused Junction

!Low Forward Voltage Drop

!High Current Capability

!High Reliability

!High Surge Current Capability

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.181 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

A B A

C

		D
	R-1
Dim	Min	Max
A	20.0	—
B	2.00	3.50
C	0.53	0.64
D	2.20	2.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1A1

1A2

1A3

1A4

1A5

1A6

1A7

Unit

Peak Repetitive Reverse Voltage

VRRM

50

100

200

400

600

800

1000

V

Working Peak Reverse Voltage

VRWM

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

IO

1.0

A

(Note 1)

@TA = 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

30

A

rated load (JEDEC Method)

Forward Voltage

@IF = 1.0A

VFM

1.0

V

Peak Reverse Current

@TA = 25°C

IRM

5.0

µA

At Rated DC Blocking Voltage

@TA = 100°C

50

Typical Junction Capacitance (Note 2)

Cj

15

pF

Typical Thermal Resistance Junction to Ambient

R JA

50

K/W

(Note 1)

Operating Temperature Range

Tj

-65 to +125

°C

Storage Temperature Range

TSTG

-65 to +150

°C

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1A1 – 1A7

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© 2002 Won-Top Electronics