WTE 1N5822-TB, 1N5822-T3, 1N5822, 1N5821-T3, 1N5821 Datasheet

				W T E	1N5820 – 1N5822
			PO WE R SEM IC O ND U C TO RS
					3.0A SCHOTTKY BARRIER RECTIFIER

Features

!Schottky Barrier Chip

!Guard Ring Die Construction for Transient Protection

!High Current Capability

!Low Power Loss, High Efficiency

!High Surge Current Capability

!For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 1.2 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

A B A

C

		D
	DO-201AD
Dim	Min	Max
A	25.4	—
B	8.50	9.50
C	1.20	1.30
D	5.0	5.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic		Symbol	1N5820	1N5821	1N5822	Unit
Peak Repetitive Reverse Voltage		VRRM
Working Peak Reverse Voltage		VRWM	20	30	40	V
DC Blocking Voltage		VR
RMS Reverse Voltage		VR(RMS)	14	21	28	V
Average Rectified Output Current (Note 1)	@TL = 90°C	IO		3.0		A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load		IFSM		80		A
(JEDEC Method)	@TL = 75°C
Forward Voltage	@IF = 3.0A	VFM	0.475	0.50	0.525	V
	@IF = 9.4A		0.850	0.90	0.950
Peak Reverse Current	@TA = 25°C	IRM		2.0		mA
At Rated DC Blocking Voltage	@TA = 100°C			20
Typical Junction Capacitance (Note 2)		Cj		250		pF
Typical Thermal Resistance Junction to Ambient		R JA		20		K/W
Operating and Storage Temperature Range		Tj, TSTG		-65 to +150		°C

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1N5820 – 1N5822

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© 2002 Won-Top Electronics