WTE 1N5399-TB, 1N5399-T3, 1N5399, 1N5398-TB, 1N5398-T3 Datasheet
...
|
|
|
|
W T E |
1N5391 – 1N5399 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PO WE R SEM IC O ND U C TO RS |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.5A SILICON RECTIFIER |
Features
!Diffused Junction
!Low Forward Voltage Drop
! |
High Current Capability |
|
|
A |
|
|
|
|
|
B |
|
|
|
|
|
|
|
A |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
! |
High Reliability |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
! |
High Surge Current Capability |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Mechanical Data
!Case: Molded Plastic
!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
!Polarity: Cathode Band
!Weight: 0.40 grams (approx.)
!Mounting Position: Any
!Marking: Type Number
C
|
|
D |
|
|
|
|
DO-15 |
|
Dim |
Min |
Max |
|
|
|
A |
25.4 |
— |
|
|
|
B |
5.50 |
7.62 |
|
|
|
C |
0.71 |
0.864 |
|
|
|
D |
2.60 |
3.60 |
|
|
|
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic |
|
Symbol |
1N |
1N |
1N |
|
1N |
|
1N |
1N |
1N |
Unit |
|
5391 |
5392 |
5393 |
|
5395 |
|
5397 |
5398 |
5399 |
|||
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Repetitive Reverse Voltage |
|
VRRM |
|
|
|
|
|
|
|
|
|
|
Working Peak Reverse Voltage |
|
VRWM |
50 |
100 |
200 |
|
400 |
|
600 |
800 |
1000 |
V |
DC Blocking Voltage |
|
VR |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RMS Reverse Voltage |
|
VR(RMS) |
35 |
70 |
140 |
|
280 |
|
420 |
560 |
700 |
V |
|
|
|
|
|
|
|
|
|
|
|
|
|
Average Rectified Output Current |
|
IO |
|
|
|
1.5 |
|
|
|
|
A |
|
(Note 1) |
@TA = 75°C |
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
Non-Repetitive Peak Forward Surge Current |
|
|
|
|
|
|
|
|
|
|
|
|
8.3ms Single half sine-wave superimposed on |
IFSM |
|
|
|
50 |
|
|
|
|
A |
||
rated load (JEDEC Method) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Forward Voltage |
@IF = 1.5A |
VFM |
|
|
|
1.0 |
|
|
|
|
V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Peak Reverse Current |
@TA = 25°C |
IRM |
|
|
|
5.0 |
|
|
|
|
µA |
|
At Rated DC Blocking Voltage |
@TA = 100°C |
|
|
|
50 |
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
||
Typical Junction Capacitance (Note 2) |
Cj |
|
|
|
30 |
|
|
|
|
pF |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
Typical Thermal Resistance Junction to Ambient |
R JA |
|
|
|
50 |
|
|
|
|
K/W |
||
(Note 1) |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Operating Temperature Range |
|
Tj |
|
|
|
-65 to +125 |
|
|
|
°C |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
Storage Temperature Range |
|
TSTG |
|
|
|
-65 to +150 |
|
|
|
°C |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5391 – 1N5399 |
1 of 3 |
© 2002 Won-Top Electronics |
Loading...