WTE 1N5408-TB, 1N5408-T3, 1N5408, 1N5407-TB, 1N5407-T3 Datasheet

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WTE 1N5408-TB, 1N5408-T3, 1N5408, 1N5407-TB, 1N5407-T3 Datasheet

 

 

 

 

W T E

1N5400 – 1N5408

 

 

 

 

 

 

 

 

 

 

 

 

 

PO WE R SEM IC O ND UC TO R S

 

 

 

 

 

 

 

 

 

 

 

 

3.0A SILICON RECTIFIER

Features

!Diffused Junction

!Low Forward Voltage Drop

!

High Current Capability

 

 

A

 

 

 

 

 

B

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

!

High Reliability

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

!

High Surge Current Capability

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 1.2 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

!Epoxy: UL 94V-O rate flame retardant

C

 

 

D

 

 

 

 

DO-201AD

 

Dim

Min

Max

 

 

 

A

25.4

 

 

 

B

8.50

9.50

 

 

 

C

1.20

1.30

 

 

 

D

5.0

5.60

 

 

 

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

 

Symbol

1N

1N

1N

 

1N

 

1N

1N

1N

Unit

 

5400

5401

5402

 

5404

 

5406

5407

5408

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak Repetitive Reverse Voltage

 

VRRM

 

 

 

 

 

 

 

 

 

 

Working Peak Reverse Voltage

 

VRWM

50

100

200

 

400

 

600

800

1000

V

DC Blocking Voltage

 

VR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RMS Reverse Voltage

 

VR(RMS)

35

70

140

 

280

 

420

560

700

V

 

 

 

 

 

 

 

 

 

 

 

 

 

Average Rectified Output Current

 

IO

 

 

 

3.0

 

 

 

 

A

(Note 1)

@TA = 75°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Non-Repetitive Peak Forward Surge Current

 

 

 

 

 

 

 

 

 

 

 

8.3ms Single half sine-wave superimposed on

IFSM

 

 

 

200

 

 

 

 

A

rated load (JEDEC Method)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Voltage

@IF = 3.0A

VFM

 

 

 

1.0

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

Peak Reverse Current

@TA = 25°C

IRM

 

 

 

5.0

 

 

 

 

µA

At Rated DC Blocking Voltage

@TA = 100°C

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical Junction Capacitance (Note 2)

Cj

 

 

 

50

 

 

 

 

pF

 

 

 

 

 

 

 

 

 

 

 

 

Typical Thermal Resistance Junction to Ambient

R JA

 

 

 

18

 

 

 

 

K/W

(Note 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operating Temperature Range

 

Tj

 

 

 

-65 to +125

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

Storage Temperature Range

 

TSTG

 

 

 

-65 to +150

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1N5400 – 1N5408

1 of 3

© 2002 Won-Top Electronics

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