WTE HER208-TB, HER208-T3, HER208, HER207-TB, HER207-T3 Datasheet

				WTE	HER201 – HER208
			POWER SEMICONDUCTORS
					2.0A HIGH EFFICIENCY RECTIFIER

Features

!Diffused Junction

!Low Forward Voltage Drop

!High Current Capability

!High Reliability

!High Surge Current Capability

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.40 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

A B A

C

		D
	DO-15
Dim	Min	Max
A	25.4	—
B	5.50	7.62
C	0.71	0.864
D	2.60	3.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

HER

HER

HER

HER

HER

HER

HER

HER

Unit

201

202

203

204

205

206

207

208

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

200

300

400

600

800

1000

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

210

280

420

560

700

V

Average Rectified Output Current

IO

2.0

A

(Note 1)

@TA = 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

60

A

rated load (JEDEC Method)

Forward Voltage

@IF = 2.0A

VFM

1.0

1.3

1.7

V

Peak Reverse Current

@TA = 25°C

IRM

5.0

µA

At Rated DC Blocking Voltage

@TA = 100°C

100

Reverse Recovery Time (Note 2)

trr

50

75

nS

Typical Junction Capacitance (Note 3)

Cj

60

40

pF

Operating Temperature Range

Tj

-65 to +125

°C

Storage Temperature Range

TSTG

-65 to +150

°C

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2.Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3.Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

HER201 – HER208

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© 2002 Won-Top Electronics