WTE ER3D-T3, ER3G-T3, ER3G-T1, ER3E-T3, ER3E-T1 Datasheet

				WTE	ER3A – ER3J
			POWER SEMICONDUCTORS
					3.0A SURFACE MOUNT SUPER FAST RECTIFIER

Features

!Glass Passivated Die Construction

!

Ideally Suited for Automatic Assembly

B

!

Low Forward Voltage Drop, High Efficiency

! Surge Overload Rating to 100A Peak

D

!

Low Power Loss

A

!

Super-Fast Recovery Time

F

!

Plastic Case Material has UL Flammability

Classification Rating 94V-O

C

H

G

E

Mechanical Data

SMC/DO-214AB

Dim

Min

Max

!

Case: Low Profile Molded Plastic

A

5.59

6.22

!

Terminals: Solder Plated, Solderable

B

6.60

7.11

per MIL-STD-750, Method 2026

C

2.75

3.25

!

Polarity: Cathode Band or Cathode Notch

D

0.152

0.305

!

Marking: Type Number

E

7.75

8.13

!

Weight: 0.21 grams (approx.)

F

2.00

2.62

G

0.051

0.203

H

0.76

1.27

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Characteristic

Symbol

ER3A

ER3B

ER3C

ER3D

ER3E

ER3G

ER3J

Unit

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

150

200

300

400

600

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

105

140

210

280

420

V

Average Rectified Output Current

@TL = 75°C

IO

3.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

100

A

rated load (JEDEC Method)

Forward Voltage

@IF = 3.0A

VFM

0.95

1.25

1.7

V

Peak Reverse Current

@TA = 25°C

IRM

5.0

µA

At Rated DC Blocking Voltage

@TA = 100°C

500

Reverse Recovery Time (Note 1)

trr

35

nS

Typical Junction Capacitance (Note 2)

Cj

45

pF

Typical Thermal Resistance (Note 3)

R JL

16

K/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,

2.Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3.Mounted on P.C. Board with 8.0mm2 land area.

ER3A – ER3J

1 of 3

© 2002 Won-Top Electronics