WTE 1N4007G-TB, 1N4007G, 1N4006G-TB, 1N4006G-T3, 1N4006G Datasheet

				WTE	1N4001G – 1N4007G
			POWER SEMICONDUCTORS		1.0A GLASS PASSIVATED RECTIFIER

Features

!Glass Passivated Die Construction

!Low Forward Voltage Drop

!High Current Capability

!High Reliability

!High Surge Current Capability

Mechanical Data

!Case: Molded Plastic

!Terminals: Plated Leads Solderable per MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.35 grams (approx.)

!Mounting Position: Any

!Marking: Type Number

A B A

C

		D
	DO-41
Dim	Min	Max
A	25.4	—
B	4.06	5.21
C	0.71	0.864
D	2.00	2.72

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1N

1N

1N

1N

1N

1N

1N

Unit

4001G

4002G

4003G

4004G

4005G

4006G

4007G

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

200

400

600

800

1000

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

IO

1.0

A

(Note 1)

@TA = 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

30

A

rated load (JEDEC Method)

Forward Voltage

@IF = 1.0A

VFM

1.0

V

Peak Reverse Current

@TA = 25°C

IRM

5.0

µA

At Rated DC Blocking Voltage

@TA = 100°C

50

Typical Junction Capacitance (Note 2)

Cj

8.0

pF

Typical Thermal Resistance Junction to Ambient

R JA

100

K/W

(Note 1)

Operating Temperature Range

Tj

-65 to +175

°C

Storage Temperature Range

TSTG

-65 to +175

°C

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1N4001G – 1N4007G

1 of 3

© 2002 Won-Top Electronics