WTE 1N4151W-T3, 1N4151W-T1, 1N4150W-T3, 1N4150W-T1 Datasheet

				WTE	1N4150W / 1N4151W
			POWER SEMICONDUCTORS
					SURFACE MOUNT FAST SWITCHING DIODE

Features

!High Conductance

!

Fast Switching Speed

A

! Surface Mount Package Ideally Suited for

SOD-123

Automatic Insertion

Dim

Min

Max

!

For General Purpose Switching Application

C

A

3.6

3.9

! Plastic Material – UL Recognition Flammability

D

B

2.5

2.8

Classification 94V-O

B

C

1.4

1.8

D

0.5

0.7

E

E

—

0.2

G

0.4

—

Mechanical Data

H

H

0.95

1.35

! Case: SOD-123, Molded Plastic

G

J

—

0.12

!

Terminals: Plated Leads Solderable per

J

All Dimensions in mm

MIL-STD-202, Method 208

!Polarity: Cathode Band

!Weight: 0.01 grams (approx.)

! Marking: 1N4150W	A4
1N4151W	A5
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic			Symbol	1N4150W		1N4151W	Unit
Non-Repetitive Peak Reverse Voltage			VRM	50		75	V
Peak Repetitive Reverse Voltage			VRRM
Working Peak Reverse Voltage			VRWM		50		V
DC Blocking Voltage			VR
RMS Reverse Voltage			VR(RMS)		35		V
Forward Continuous Current (Note 1)			IFM	400		300	mA
Average Rectified Output Current (Note 1)			IO	200		150	mA
Non-Repetitive Peak Forward Surge Current		@ t = 1.0µs	IFSM	4.0		2.0	A
		@ t = 1.0s		1.0		0.5
Power Dissipation (Note 1)			Pd	410		500	mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1)			R JA		300		K/W
Operating and Storage Temperature Range			Tj, TSTG		-65 to +150		°C
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic			Symbol	1N4150W		1N4151W	Unit
Forward Voltage Drop (Note 4)			VFM		1.0		V
Peak Reverse Leakage Current		@ VR = 50V	IRM	100		50	nA
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)			Cj	2.5		2.0	pF
Reverse Recovery Time (Note 2, 3)			trr	4.0		2.0	nS

Note: 1. Valid provided that terminals are kept at ambient temperature.

2.1N4150W: Measured with IF = IR = 200mA, IRR = 0.1 x IR, RL = 100 .

3.1N4151W: Measured with IF = IR = 10mA, IRR = 1.0 x IR, RL = 100 .

4.1N4150W: Measured with IF = 200mA. 1N4151W: Measured with IF = 10mA

1N4150W / 1N4151W

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