TEXAS INSTRUMENTS EGF1A Technical data

EGF1A - EGF1D
Features
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
Fast Rectifiers (Glass Passivated)
EGF1A - EGF1D
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 50 100 150 200 V
RRM
I
Average Rectified Forward Current, @ TL = 100°C 1.0 A
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
TJ Operating Junction Temperature -65 to +175
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175
Parameter
= 25°C unless otherwise noted
A
1A 1B 1C 1D
Value
Units
30 A
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 2.0 W R
θJA
R
θJL
Thermal Resistance, Junction to Ambient* 85 Thermal Resistance, Junction to Lead* 30
*Device mounted on FR-4 PCB 0.013 mm.
Symbol
VF Forward Voltage @ 1.0 A 1.0 V trr Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
IR
CT Total Capacitance
F
Reverse Current @ rated V
= 4.0 V, f = 1.0 MHz
V
R
Parameter
Parameter
= 0.25 A
RR
R TA
= 25°C unless otherwise noted
A
= 25°C
T
= 100°C
A
Value
Device
1A 1B 1C 1D
50 ns 10
100
15 pF
Units
C/W
°
C/W
°
Units
A
µ
A
µ
EGF1A-EGF1D, Rev. D2001 Fairchild Semiconductor Corporation
T ypical Characteristics
EGF1A - EGF1D
1.6
[A]
F
1.4
1.2 1
RESISTIVE OR
0.8
INDUCTIVE LOAD P.C.B. MO UNTED
0.6
ON 0 .2 x 0.2" (5.0 x 5.0 mm)
0.4
COPP ER PAD AREAS
0.2 0
0 255075100125150175
Average Rectified Forward Current, I
Lead Temperature [ºC]
100
T = 25 C
T = 25 C
º
º
J
A
Pulse Width = 30 0µµµµS 2% Duty Cycle
10
[A]
F
1
0.1
Forward Current, I
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage, VF [V]
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
40
[A]
FSM
30
20
10
0
12 51020 50100
Peak Forward Surge Current, I
Number of Cycles at 60Hz
Figure 3. Non-Repetitive Surge Current
1000
T = 100 C
º
100
[mA]
R
A
10
T = 25 C
T = 25 C
º
º
J
1
A
Reverse Current, I
0.1 0 20406080100120140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
60
50
[pF]
T
40
30
20
10
Total Capacitance, C
0
0.1 0.5 1 2 5 10 20 50 100 500
50
NONINDUCTIVE
50V (approx)
50 NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
50 NONINDUCTIVE
DUT
OSCILLOSCOPE (Note 1)
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
(-)
Pulse Generator (Note 2)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR 5/ 10 ns/ cm
EGF1A-EGF1D, Rev. D2001 Fairchild Semiconductor Corporation
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