EGF1A - EGF1D
Features
• Low forward voltage drop.
• Low profile package.
• Fast switching for high efficiency.
Fast Rectifiers (Glass Passivated)
EGF1A - EGF1D
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 50 100 150 200 V
RRM
I
Average Rectified Forward Current, @ TL = 100°C 1.0 A
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
TJ Operating Junction Temperature -65 to +175
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175
Parameter
= 25°C unless otherwise noted
A
1A 1B 1C 1D
Value
Units
30 A
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 2.0 W
R
θJA
R
θJL
Thermal Resistance, Junction to Ambient* 85
Thermal Resistance, Junction to Lead* 30
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Symbol
VF Forward Voltage @ 1.0 A 1.0 V
trr Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
IR
CT Total Capacitance
F
Reverse Current @ rated V
= 4.0 V, f = 1.0 MHz
V
R
Parameter
Parameter
= 0.25 A
RR
R TA
= 25°C unless otherwise noted
A
= 25°C
T
= 100°C
A
Value
Device
1A 1B 1C 1D
50 ns
10
100
15 pF
Units
C/W
°
C/W
°
Units
A
µ
A
µ
EGF1A-EGF1D, Rev. D2001 Fairchild Semiconductor Corporation
T ypical Characteristics
EGF1A - EGF1D
1.6
[A]
F
1.4
1.2
1
RESISTIVE OR
0.8
INDUCTIVE LOAD
P.C.B. MO UNTED
0.6
ON 0 .2 x 0.2"
(5.0 x 5.0 mm)
0.4
COPP ER PAD AREAS
0.2
0
0 255075100125150175
Average Rectified Forward Current, I
Lead Temperature [ºC]
100
T = 25 C
T = 25 C
º
º
J
A
Pulse Width = 30 0µµµµS
2% Duty Cycle
10
[A]
F
1
0.1
Forward Current, I
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage, VF [V]
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
40
[A]
FSM
30
20
10
0
12 51020 50100
Peak Forward Surge Current, I
Number of Cycles at 60Hz
Figure 3. Non-Repetitive Surge Current
1000
T = 100 C
º
100
[mA]
R
A
10
T = 25 C
T = 25 C
º
º
J
1
A
Reverse Current, I
0.1
0 20406080100120140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
60
50
[pF]
T
40
30
20
10
Total Capacitance, C
0
0.1 0.5 1 2 5 10 20 50 100 500
50
Ω
NONINDUCTIVE
50V
(approx)
50Ω
NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
50Ω
NONINDUCTIVE
DUT
OSCILLOSCOPE
(Note 1)
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
(-)
Pulse
Generator
(Note 2)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
5/ 10 ns/ cm
EGF1A-EGF1D, Rev. D2001 Fairchild Semiconductor Corporation
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
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UHC™
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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Rev. H4
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