Siemens SFH488425, SPLPL85, SPLPL90 Datasheet

Pulsed Laser Diode in Plastic Package SPL PLxx
10 W Peak (Class 3 Laser Product) (SFH 4884xx)

elim

Pr

Features

•

•

•

•

Applications

•

•

•

•

inary

Low cost plastic package
Reliable strained InGaAs/GaAs material
High power large-optical-cavity structure
Single emitting area 200 µm × 2 µm

Range finding
Security, surveillance
Illumination, ignition
Testing and measurement

Type

Old Type

Wavelength

*)

(as of Oct. 1996)

SPL PL85
SPL PL90

*) Other wavelengths in the range of 780 nm ... 980 nm are available on request.

SFH 488425
–

850 nm
904 nm

Maximum Ratings

T

(

= 25 °C)

A

Parameter

Symbol Values Unit

min. typ. max.

Forward current
Pulse width (FWHM)
Duty factor
Reverse voltage

I
t
D
V

F

p

––20
– – 100
– 0.1 –

R

––3

Ordering Code

Q62702-P1759
on request

A
ns
%
V

Operating temperature
Storage temperature
Soldering temperature

t

(

= 5 s, 2 mm from bottom edge of case)

m,ax

T

op

T

stg

T

s

– 20 … + 85
– 40 … + 100
– – 260

°C
°C
°C

Semiconductor Group 1 02.97

Optical Characteristics

(TA = 25 °C)

SPL PLxx

(SFH 4884xx)

Parameter

Emission wavelength
Spectral width (FWHM)

Forward current (10 W)

1)

1)

1)

Threshold current
Forward voltage (0.1 A)
Forward voltage (20 A)
Rise and fall time (10% ... 90%)
Beam spread at 20 A (FWHM)
Temperature coefficient of wavelength
Temperature coefficient of optical power

Symbol Values Unit

min. typ. max.

λ 830 850 870
∆λ 4

I

f

I

th

V

F

V

F

,

t

t

r

r

θ|| × θ

2)

∂λ / ∂
∂P/ ∂

––14A
–1–A
– 1.6 – V
–610V
210–ns
– 10 × 30 – °

⊥

T

0.25 0.27 0.30 nm/K

T

– – 0.5 – %/K

nm
nm

Thermal resistance

1) Standard operating conditions refer to pulses of 50 ns at 10 kHz rate with 10 W peak power into NA = 0.5

2) Depending on emission wavelength.

R

th JA

– 160 – K/W

Semiconductor Group 2