NEC UPA602T Datasheet

DATA SHEET
0.32
+0.1 –0.05
1.5
2.8 ±0.2
0.95 0.95
1.9
2.9 ±0.2
0.16
+0.1 –0.06
0.8
1.1 to 1.4
0 to 0.1
0.65
+0.1
–0.15
MOS FIELD EFFECT TRANSISTOR
µ
N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
PA602T
The µPA602T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES

• Two MOS FET circuits in package the same size as
SC-59
µ
• Complement to
• Automatic mounting supported
PA603T
PACKAGE DIMENSIONS (in millimeters)

PIN CONNECTION (Top view)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) 100 mA Drain Current (pulse) ID(pulse)* 200 mA Total Power Dissipation PT 300 (Total) mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C
Document No. G11249EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
* PW 10 ms, Duty Cycle 50 %
©
1996
µ
PA602T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 1.0 Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±1.0 Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA 0.8 1.4 1.8 V Forward Transfer Admittance |yfs|VDS = 5.0 V, ID = 10 mA 20 mS Drain to Source On-State Resistance Drain to Source On-State Resistance
RDS(on)1 VGS = 4.0 V, ID = 10 mA 19 30
RDS(on)2 VGS = 10 V, ID = 10 mA 15 25 Input Capacitance Ciss VDS = 5.0 V, VGS = 0, f = 1.0 MHz 16 pF Output Capacitance Coss 12 pF Reverse Transfer Capacitance Crss 3pF Turn-On Delay Time td(on) VGS(on) = 5.0 V, RG = 10 Ω, VDD = 5.0 V, 17 ns Rise Time tr
ID = 10 mA, RL = 500
10 ns Turn-Off Delay Time td(off) 68 ns Fall Time tf 38 ns
µ
A
µ
A
Marking: IA

SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)

V
PG.
GS
V
0
τ
τ = 1 s
µ
Duty Cycle 1 %
GS
R
DUT
L
V
G
R
Gate voltage waveform
DD
Drain current
10 %
0
I
D
10 % 10 %
90 %
V
I
D
waveform
t
d(on)
t
r
t
t
on
GS(on)
d(off)
t
off
90 %
90 %
t
f
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA602T
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
20 40 60 80 100 120 140 160
0
T
C
- Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
120
Pulsed measurement
100
80
4.0 V
3.5 V
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
350
300
250
200
Per one unit
150
100
- Total Power Dissipation - mW
T
50
P
0
25 50 75 100 125 150
A
- Ambient Temperature - ˚C
T
TRANSFER CHARACTERISTICS
1 000
100
Free air
Total
VDS = 5 V Pulsed measurement
60
40
- Drain Current - mA
D
I
20
0
1324567
DS
- Drain to Source Voltage - V
V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
3
2
1
- Gate Cut-off Voltage - V
GS(off)
V
0
–30
0 30 60 90 120 150
ch
- Channel Temperature - ˚C
T
3.0 V
VGS = 2.5 V
DS
= 5 V
V
D
= 1.0 A
I
10
T
A
= 75 ˚C
25 ˚C
- Drain Current - mA
D
I
1
0.1 0
GS
V
2468
- Gate to Source Voltage - V
–25 ˚C
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
V
DS
= 5 V
µ
TA = 75 ˚C
25 ˚C
10
| - Forward Transfer Admittance - mS
fs
|y
1
1
–25 ˚C
10 100 1 0 0 0
D
- Drain Current - mA
I
3
µ
PA602T
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
100
50
10
5
1
RDS(on) - Drain to Source On-State Resistance -
1
5 10 50 100
GS - Gate to Source Voltage - V
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
30
V
GS = 10 V
Pulsed measurement
20
ID = 10 mA Pulsed measurement
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
1 000
500
100
50
RDS(on) - Drain to Source On-State Resistance -
10
10
50 100 500 1 0 0 0
D - Drain Current - mA
I
CAPACITANCE vs. DARIN TO SOURCE VOLTAGE
100
10
GS = 10 V
V Pulsed measurement
TA = 75 ˚C 25 ˚C
–25 ˚C
Ciss Coss
10
0
RDS(on) - Drain to Source On-State Resistance -
–30
0 30 60 90 120 150
ch - Channel Temperature - ˚C
T
SWITCHING CHARACTERISTICS
100
td(off)
50
tf
tr
20
td(on)
td(on), tr, td(off), tf - Switching Time - ns
10
10
VDD = 5 V
GS = 5 V
V R
G = 10
20 50 100
D - Drain Current - mA
I
1
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
0.1
0.1
1 10 100
DS - Drain to Source Voltage - V
V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
ISD - Source to Drain Current - mA
0.1
0.4
0.5 0.6 0.7 0.8 0.9 1
SD - Source to Drain Voltage - V
V
Crss
4
µ
PA602T

REFERENCE

Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E
5
µ
PA602T
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
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