The µPA602T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
SC-59
µ
• Complement to
• Automatic mounting supported
PA603T
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETERSYMBOLRATINGSUNIT
Drain to Source VoltageVDSS50V
Gate to Source VoltageVGSS±20V
Drain Current (DC)ID(DC)100mA
Drain Current (pulse)ID(pulse)*200mA
Total Power DissipationPT300 (Total)mW
Channel TemperatureTch150˚C
Storage TemperatureTstg–55 to +150˚C
Document No. G11249EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
10ns
Turn-Off Delay Timetd(off)68ns
Fall Timetf38ns
µ
A
µ
A
Marking: IA
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED)
V
PG.
GS
V
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
GS
R
DUT
L
V
G
R
Gate
voltage
waveform
DD
Drain
current
10 %
0
I
D
10 %10 %
90 %
V
I
D
waveform
t
d(on)
t
r
t
t
on
GS(on)
d(off)
t
off
90 %
90 %
t
f
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA602T
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
20406080100 120 140 160
0
T
C
- Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
120
Pulsed
measurement
100
80
4.0 V
3.5 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
350
300
250
200
Per one unit
150
100
- Total Power Dissipation - mW
T
50
P
0
255075100125150
A
- Ambient Temperature - ˚C
T
TRANSFER CHARACTERISTICS
1 000
100
Free air
Total
VDS = 5 V
Pulsed
measurement
60
40
- Drain Current - mA
D
I
20
0
1324567
DS
- Drain to Source Voltage - V
V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
3
2
1
- Gate Cut-off Voltage - V
GS(off)
V
0
–30
0306090120150
ch
- Channel Temperature - ˚C
T
3.0 V
VGS = 2.5 V
DS
= 5 V
V
D
= 1.0 A
I
10
T
A
= 75 ˚C
25 ˚C
- Drain Current - mA
D
I
1
0.1
0
GS
V
2468
- Gate to Source Voltage - V
–25 ˚C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
100
V
DS
= 5 V
µ
TA = 75 ˚C
25 ˚C
10
| - Forward Transfer Admittance - mS
fs
|y
1
1
–25 ˚C
101001 0 0 0
D
- Drain Current - mA
I
3
µ
PA602T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
50
10
5
1
RDS(on) - Drain to Source On-State Resistance - Ω
1
51050100
GS - Gate to Source Voltage - V
V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
30
V
GS = 10 V
Pulsed
measurement
20
ID = 10 mA
Pulsed
measurement
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1 000
500
100
50
RDS(on) - Drain to Source On-State Resistance - Ω
10
10
501005001 0 0 0
D - Drain Current - mA
I
CAPACITANCE vs.
DARIN TO SOURCE VOLTAGE
100
10
GS = 10 V
V
Pulsed
measurement
TA = 75 ˚C
25 ˚C
–25 ˚C
Ciss
Coss
10
0
RDS(on) - Drain to Source On-State Resistance - Ω
–30
0306090120150
ch - Channel Temperature - ˚C
T
SWITCHING CHARACTERISTICS
100
td(off)
50
tf
tr
20
td(on)
td(on), tr, td(off), tf - Switching Time - ns
10
10
VDD = 5 V
GS = 5 V
V
R
G = 10 Ω
2050100
D - Drain Current - mA
I
1
Ciss, Coss, Crss - Capacitance - pF
VGS = 0
f = 1 MHz
0.1
0.1
110100
DS - Drain to Source Voltage - V
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
ISD - Source to Drain Current - mA
0.1
0.4
0.50.60.70.80.91
SD - Source to Drain Voltage - V
V
Crss
4
µ
PA602T
REFERENCE
Document NameDocument No.
NEC semiconductor device reliability/quality control systemTEI-1202
Quality grade on NEC semiconductor devicesIEI-1209
Semiconductor device mounting technology manualC10535E
Guide to quality assurance for semiconductor devicesMEI-1202
Semiconductor selection guideX10679E
5
µ
PA602T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.