DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μPA573T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
FOR SWITCHING
The μPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.
•Two source common MOS FET circuits in package the same size as SC-70
•Directly driven by ICs having a 3 V power supply
•Automatic mounting supported
PACKAGE |
DIMENSIONS |
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0.2 –0+0.1 |
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0.15 |
–0.05+0.1 |
±0.12.1 |
±0.11.25 |
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0 to 0.1 |
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0.65 |
0.65 |
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0.7 |
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0.9 |
±0.1 |
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1.3 |
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2.0 ±0.2 |
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EQUIVALENT CIRCUIT |
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5 |
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4 |
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PIN CONNECTION |
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1. |
Gate 1 (G1) |
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2. Source (common) |
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3. Gate 2 (G2) |
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4. |
Drain 2 (D2) |
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5. |
Drain 1 (D1) |
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Marking: CB |
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1 |
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2 |
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3 |
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ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
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RATINGS |
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UNIT |
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Drain to Source Voltage |
VDSS |
VGS = 0 |
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–30 |
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V |
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Gate to Source Voltage |
VGSS |
VDS = 0 |
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V |
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+7 |
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Drain Current (DC) |
ID(DC) |
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+100 |
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mA |
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Drain Current (pulse) |
ID(pulse) |
PW ≤ 10 ms, Duty Cycle ≤ 50 % |
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+200 |
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mA |
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Total Power Dissipation |
PT |
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200 (Total) |
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mW |
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Channel Temperature |
Tch |
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150 |
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˚C |
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Operating Temperature |
Topt |
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–55 to +80 |
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˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
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˚C |
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Document No. G11245EJ1V0DS00 (1st edition) |
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Date Published June 1996 P |
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Printed in Japan |
© |
1996 |
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μPA573T |
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Drain Cut-off Current |
IDSS |
VDS = –30 V, VGS = 0 |
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–1.0 |
μA |
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Gate Leakage Current |
IGSS |
VGS = |
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+3.0 |
μA |
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+5 V, VDS = 0 |
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Gate Cut-off Voltage |
VGS(off) |
VDS = –3 V, ID = –10 μA |
–1.6 |
–1.9 |
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–2.3 |
V |
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Forward Transfer Admittance |
|yfs| |
VDS = –3 V, ID = –10 mA |
20 |
30 |
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S |
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Drain to Source On-State Resistance |
RDS(on)1 |
VGS = –2.5 V, ID = –1 mA |
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55 |
100 |
Ω |
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Drain to Source On-State Resistance |
RDS(on)2 |
VGS = –4.0 V, ID = –10 mA |
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20 |
25 |
Ω |
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Input Capacitance |
Ciss |
VDS = –5.0 V, VGS = 0, f = 1 MHz |
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16 |
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pF |
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Output Capacitance |
Coss |
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13 |
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pF |
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Reverse Transfer Capacitance |
Crss |
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2 |
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pF |
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Turn-On Delay Time |
td(on) |
VDD = – 5 V, ID = –10 mA, VGS(on) = –5 V, |
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10 |
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ns |
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RG = 10 Ω, RL = 500 Ω |
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Rise Time |
tr |
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40 |
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ns |
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Turn-Off Delay Time |
td(off) |
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130 |
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ns |
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Fall Time |
tf |
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80 |
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ns |
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PG.
0
VGS
τ |
τ = 1 μs
Duty Cycle ≤ 1 %
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VGS |
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RL |
Gate |
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10 % |
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DUT |
voltage |
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VGS(on) |
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waveform |
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90 % |
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VDD |
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RG |
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ID |
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td(on) |
tr |
td(off) |
tf |
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Drain |
0 |
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current |
10 % |
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10 % |
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waveform |
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ID |
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90 % |
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90 % |
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2