NEC Electronics Inc UPA505T Datasheet

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NEC Electronics Inc UPA505T Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA505T

N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)

The μPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES

Two source common MOS FET circuits in package the same size as SC-59

Complementary MOS FETs are provided in one package.

Automatic mounting supported

PACKAGE

DIMENSIONS

(in millimeters)

 

0.32 –0.05+0.1

 

 

0.16 –0.06+0.1

 

+0.1

–0.15

 

 

 

2.8±0.2

0.65

 

 

 

1.5

 

 

0 to 0.1

 

 

 

 

 

 

 

 

0.95

0.95

0.8

 

 

 

1.1 to 1.4

 

 

 

1.9

 

 

 

 

 

 

 

2.9 ±0.2

 

PIN CONNECTION (Top View)

Marking: FA

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

SYMBOL

RATINGS

UNIT

 

 

 

 

Drain to Source Voltage

VDSS

50/–50

V

 

 

 

 

Gate to Source Voltage

VGSS

V

±20/+16

Drain Current (DC)

ID(DC)

mA

±100/+100

Drain Current (pulse)

ID(pulse)*

mA

±200/+200

Total Power Dissipation

PT

300 (TOTAL)

mW

 

 

 

 

Channel Temperature

Tch

150

˚C

 

 

 

 

Storage Temperature

Tstg

–55 to +150

˚C

 

 

 

 

* PW 10 ms, Duty Cycle 50 %

Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively.

Document No. G11241EJ1V0DS00 (1st edition) Date Published June 1996 P

Printed in Japan

1996

μPA505T

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Drain Cut-off Current

IDSS

VDS = 50/–50 V, VGS = 0

1.0

μA

 

 

 

 

 

–1.0

 

 

 

 

 

 

 

 

Gate Leakage Current

IGSS

±1.0

μA

VGS = ±20/+16 V, VDS = 0

 

 

 

 

 

 

 

 

 

 

 

+10

 

Gate Cut-off Voltage

VGS(off)

VDS = 5.0/–5.0 V, ID = 1/–1 μA

0.8

1.4

1.8

V

 

 

 

–1.5

–1.9

–2.5

 

 

 

 

 

 

 

 

Forward Transfer Admittance

|yfs|

VDS = 5.0/–5.0 V, ID = 10/–10 mA

20

mS

 

 

 

15

 

 

 

 

 

 

 

 

 

 

Drain to Source On-State Resistance

RDS(on)1

VGS = 4/–4 V, ID = 10/–10 mA

19

30

Ω

 

 

 

 

60

100

 

 

 

 

 

 

 

 

Drain to Source On-State Resistance

RDS(on)2

VGS = 10/–10 V, ID = 10/–10 mA

15

25

Ω

 

 

 

 

40

60

 

 

 

 

 

 

 

 

Input Capacitance

Ciss

VDS = 5.0/–5.0 V

16

pF

 

 

VGS = 0, f = 1.0 MHz

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Coss

 

12

pF

 

 

 

 

4

 

 

 

 

 

 

 

 

 

Reverse Transfer Capacitance

Crss

 

3

pF

 

 

 

 

4

 

 

 

 

 

 

 

 

 

Turn-On Delay Time

td(on)

VDD = 5.0/–5.0 V, ID = 10/–10 mA

17

ns

 

 

VGS(on) = 5.0/–5.0 V

 

40

 

 

 

 

 

 

 

 

 

 

RG = 10 Ω, RL = 500 Ω

 

 

 

 

Rise Time

tr

10

ns

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

Turn-Off Delay Time

td(off)

 

68

ns

 

 

 

 

100

 

 

 

 

 

 

 

 

 

Fall Time

tf

 

38

ns

 

 

 

 

80

 

 

 

 

 

 

 

 

 

Marking: FA

Note The left and right values in above table represent the N-ch and P-ch characteristics, respectively.

2

μPA505T

SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED)

• N-ch part

 

RL

Gate

VGS

90 %

 

 

DUT

 

VGS(on)

 

Voltage

0 10 %

 

 

 

 

 

Waveform

 

 

 

VDD

 

 

 

RG

 

 

90 %

 

 

 

ID

90 %

PG.

 

 

 

 

 

 

ID

 

 

 

 

 

 

Drain

10 %

10 %

 

 

Current

0

 

 

 

 

 

VGS

 

Waveform

 

 

 

 

tr

tf

 

 

 

0

 

 

td(on)

td(off)

 

 

 

 

τ

 

 

ton

toff

 

 

 

τ = 1 μs

 

 

 

 

Duty Cycle 1 %

 

 

 

 

• P-ch part

 

 

 

VGS

 

 

 

DUT

RL

Gate

 

 

 

 

Voltage

10 %

 

 

 

 

 

 

 

 

 

 

VGS(on)

 

 

 

Waveform

 

 

90 %

 

VDD

 

 

 

 

 

 

 

 

 

 

RG

 

 

ID

tr

td(off)

tf

 

 

 

td(on)

PG.

 

 

 

 

 

 

 

 

Drain

0

 

 

 

 

 

Current

 

 

10 %

 

 

10 %

 

 

 

 

Waveform

 

 

ID

 

 

 

 

 

 

 

0

 

 

 

 

 

90 %

VGS

 

 

 

 

 

 

 

 

90 %

 

 

τ

 

 

 

 

 

 

 

 

 

 

 

τ = 1 μs

 

 

 

 

 

 

Duty Cycle 1 %

 

 

 

 

 

 

3

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