DATA SHEET
2.8 ±0.2
1.5
0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
0 to 0.1
0.16
+0.1
–0.06
0.65
+0.1
–0.15
0.32
+0.1
–0.05
0.95
MOS FIELD EFFECT TRANSISTOR
µ
PA505T
N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The µPA505T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
• Two source common MOS FET circuits in package the
same size as SC-59
• Complementary MOS FETs are provided in one package.
• Automatic mounting supported
PACKAGE DIMENSIONS (in millimeters)
PIN CONNECTION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 50/–50 V
Gate to Source Voltage VGSS ±20/+–16 V
Drain Current (DC) ID(DC) ±100/+–100 mA
Drain Current (pulse) ID(pulse)* ±200/+–200 mA
Total Power Dissipation PT 300 (TOTAL) mW
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively.
Document No. G11241EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Marking: FA
1996
µ
PA505T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-off Current IDSS VDS = 50/–50 V, VGS = 0 – – 1.0
–1.0
Gate Leakage Current IGSS VGS = ±20/+–16 V, VDS = 0 – – ±1.0
+–10
Gate Cut-off Voltage VGS(off) VDS = 5.0/–5.0 V, ID = 1/–1 µA 0.8 1.4 1.8 V
–1.5 –1.9 –2.5
Forward Transfer Admittance |yfs|VDS = 5.0/–5.0 V, ID = 10/–10 mA 20 – – mS
15
Drain to Source On-State Resistance RDS(on)1 VGS = 4/–4 V, ID = 10/–10 mA – 19 30 Ω
60 100
Drain to Source On-State Resistance RDS(on)2 VGS = 10/–10 V, ID = 10/–10 mA – 15 25 Ω
40 60
Input Capacitance Ciss VDS = 5.0/–5.0 V – 16 – pF
VGS = 0, f = 1.0 MHz
Output Capacitance Coss –12 – pF
Reverse Transfer Capacitance Crss –3 – pF
Turn-On Delay Time t d(on) VDD = 5.0/–5.0 V, ID = 10/–10 mA – 1 7 – ns
VGS(on) = 5.0/–5.0 V
Rise Time tr
Turn-Off Delay Time td(off) –68 – ns
Fall Time tf –38 – ns
RG = 10 Ω, RL = 500 Ω
–10 – ns
10
4
4
40
40
100
80
µ
A
µ
A
Marking: FA
Note The left and right values in above table represent the N-ch and P-ch characteristics, respectively.
2
SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS
R
G
PG.
DUT
V
GS
τ = 1 s
µ
τ
Duty Cycle ≤ 1 %
R
L
V
DD
Gate
Voltage
Waveform
Drain
Current
Waveform
V
GS
I
D
0
0
10 %
10 %
t
d(on)
t
d(off)
t
on
t
off
t
r
t
f
10 %
90 %
90 %
90 %
I
D
V
GS(on)
0
(RESISTANCE LOADED)
• N-ch part
µ
PA505T
• P-ch part
PG.
0
V
GS
τ = 1 s
Duty Cycle ≤ 1 %
V
GS
Gate
L
DUT
R
G
R
V
DD
Voltage
Waveform
Drain
Current
Waveform
10 %
V
GS(on)
90 %
D
I
t
d(on)
0
10 %
trt
I
d(off)
t
f
10 %
D
90 %
90 %
τ
µ
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
• N-ch part
µ
PA505T
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
20 40 80 100 140 160
C
- Case Temperature - ˚C
T
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
120
Pulsed
measurement
100
80
60 120
4.0 V
3.5 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
350
300
250
200
Per one unit
150
100
- Total Power Dissipation - mW
T
50
P
0
25 50 75 100 125 150
A
- Ambient Temperature - ˚C
T
TRANSFER CHARACTERISTICS
1000
100
Free air
TOTAL
VDS = 5 V
Pulsed
measurement
60
3.0 V
40
- Drain Current - mA
D
I
20
VGS = 2.5 V
0 1234567
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
3
VDS = 5 V
µ
D
= 1.0 A
I
2
1
- Gate Cut-off Voltage - V
GS(off)
V
0
–30 0 30 60 90 120 150
T
ch
- Channel Temperature - ˚C
10
TA = 75 ˚C
- Drain Current - mA
D
I
1
25 ˚C
–25 ˚C
0.1
02468
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
100
DS
= 5 V
V
TA = 75 ˚C
25 ˚C
10
| - Forward Transfer Admittance - mS
fs
|y
1
–25 ˚C
1 10 100 1000
D
- Drain Current - mA
I
4
µ
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1000
500
100
50
10 50 500 1000
I
D - Drain Current - mA
RDS(on) - Drain to Source On-State Resistance - Ω
10
100
V
GS = 10 V
Pulsed
measurement
TA = 75 ˚C
25 ˚C
–25 ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
50
10
5
1 5 50 100
V
GS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - Ω
1
10
I
D = 10 mA
Pulsed
measurement
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
30
20
10
–30 0 30 60 90 120 150
T
ch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-State Resistance - Ω
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10
1
0.1 1 10 100
V
DS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
0.1
V
GS = 10 V
Pulsed
measurement
0
SWITCHING CHARACTERISTICS
100
50
20
10 20 50 100
I
D - Drain Current - mA
td(on), tr, td(off), tf - Switching Time - ns
10
td(off)
tf
tr
td(on)
VDD = 5 V
V
GS = 5 V
R
G = 10 Ω
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.6
V
SD - Source to Drain Voltage - V
ISD - Source to Drain Current - mA
0.1
0.50.4 0.7 0.8 0.9 1
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
PA505T
5
• P-ch part
µ
PA505T
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
20 40 80 100 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
–120
–100
Pulsed
measurement
–10 V
–80
60 120
–8 V
–6 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
350
300
250
200
Per one unit
150
100
50
PT - Total Power Dissipation - mW
0
25 50 75 100 125 150
T
A - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
–100
–10
Free air
TOTAL
–60
–40
VGS = –4 V
ID - Drain Current - mA
–20
0 –2 –4 –6 –8 –10 –12 –14
V
DS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
–2.4
VDS = –5.0 V
I
–2.2
D = –1 A
–2.0
–1.8
–1.6
–1.4
VGS(off) - Gate Cut-off Voltage - V
–1.2
–30 0 30 60 90 120 150
T
ch - Channel Temperature - ˚C
–1
TA = 150 ˚C
75 ˚C
–0.1
ID - Drain Current - mA
25 ˚C
–25 ˚C
–0.01
V
DS = –5.0 V
Pulsed
–0.001
0 –5 –15
measurement
–10
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
100
DS = –5.0 V
V
µ
50
20
10
TA = –25 ˚C
25 ˚C
5
75 ˚C
150 ˚C
2
|yfs| - Forward Transfer Admittance - mS
1
–1 –50–20–10–2
–5 –100
I
D - Drain Current - mA
6
µ
PA505T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
Pulsed
measurement
ID = –1 mA
ID = –10 mA
50
- Drain to Source On-State Resistance - Ω
DS(on)
R
0 –8 –16 –20
–4
GS
- Gate to Source Voltage - V
V
–12
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
140
GS
= –4 V
V
I
D
= –10 mA
120
100
80
60
40
- Drain to Source On-State Resistance - Ω
20
DS(on)
–30 0 30 60 90 120 150
R
T
ch
- Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
150
VGS = –4 V
Pulsed
measurement
100
TA = 150 ˚C
75 ˚C
25 ˚C
50
–25 ˚C
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
–2
–1 –5 –10 –20 –50 –100
I
D
- Drain Current - mA
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
50
20
10
5
- Capacitance - pF
rss
2
, C
1
oss
, C
0.5
iss
C
0.2
0.1
0.1 –50 –100
DS
- Drain to Source Voltage - V
V
–20–10–5–2–1
GS
= 0
V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
500
200
100
50
- Switching Time - ns
f
, t
d(off)
20
, t
r
, t
d(on)
t
10
5
t
f
t
d(on)
t
r
t
d(off)
–100
D
- Drain Current - mA
I
VDD = –5.0 V
V
GS
= –4 V
R
G
= 10 Ω
–200 –500–50–20–10–5
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
- Source to Drain Current - mA
SD
I
0.1
0.5 0.7 0.8 0.9 1
0.6
V
SD
- Source to Drain Voltage - V
7
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
µ
PA505T
8
µ
PA505T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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