NEC UPA1437H Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1437
PNP SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1437 is PNP silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1437H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO –100 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, T
*** 4 Circuits, T
a = 25 ˚C
c = 25 ˚C
CEO –100 V
EBO –7 V
m
C(DC)
C(pulse)*
B(DC) –0.3 A/unit
T1** 3.5 W
T2*** 28 W
j 150 ˚C
stg –55 to +150 ˚C
3
m
A/unit
6
A/unit
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
R
1 R2
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
(E)
: Base (B)
: Collector (C)
: Emitter (E)
.
1 = 8.3 kΩ
.
.
2 = 600 Ω
.
10 MIN.
1.4
0.5 ±0.1
10
Document No. IC-3516
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
y Cy
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector to Emitter VCEO(SUS) –100 V IC = –1.5 A, IB = –1.5 mA,
Sustaining Voltage L = 1 mH
Collector Leakage Current ICBO –10
Emitter Leakage Current IEBO –1 mA VEB = –5 V, IC = 0
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 3
Fall Time tf 1
*
1000 — VCE = –2 V, IC = –0.5 A
*
2000 20000 — VCE = –2 V, IC = –1.5 A
*
*
–0.9 –1.2 V IC = –1.5 A, IB = –1.5 mA
–1.5 –2 V IC = –1.5 A, IB = –1.5 mA
µ
A VCB = –100 V, IE = 0
µ
s
IC = –1.5 A
µ
µ
IB1 = –IB2 = –1.5 mA
s
s
.
VCC = 50 V, RL = 33 Ω
.
See test circuit
.
.
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1437
VIN
PW
.
PW = 50 s
Dut
.
µ
cle ≤ 2 %
B1
I
IB2
.
BB = 5 V
V
.
.
L = 33 Ω
R
.
IC
T.U.T.
.
V
CC = –50 V
.
Base Current
Wave Form
Collector
Current
Wave Form
10 %
90 %
on tstg tf
t
I
IB1
B2
IC
2
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