NEC UPA1436AH Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1436A
NPN SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1436A is NPN silicon epitaxial Darlington
Power Transistor Array that built in 4 circuits designed
for driving solenoid, relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
• C-E Reverce Diode built in.
• High Speed Switching.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1436AH 10 Pin SIP Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 150 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
a = 25 ˚C)
(T
Total Power Dissipation P
(T
c = 25 ˚C)
Junction Temperature T
Storage Temperature T
* PW ≤ 350
µ
s, Duty Cycle ≤ 2 %
** 4 Circuits
CEO 100 V
EBO 8V
C(DC) ±3 A/unit
C(pulse)* ±5 A/unit
B(DC) 0.3 A/unit
T1** 3.5 W
T2** 28 W
j 150 ˚C
stg –55 to +150 ˚C
10
2.5
1.410.6 ±0.2
2
1
(B)
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
2.54
2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
1
R
5
4
(C)
R
2
(E)
7
6
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
.
R
1 = 5 kΩ
.
.
R
2 = 1.3 kΩ
.
4.0
10 MIN.
1.4
0.5 ±0.2
9
8
10
Document No. IC-3482
(O.D. No. IC-8705)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 1
Emitter Leakage Current IEBO 5 mA VEB = 5 V, IC = 0
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 0.3
Storage Time tstg 1.5
Fall Time tf 0.4
*
2000 20000 — VCE = 2 V, IC = 1.5 A
*
1000 — VCE = 2 V, IC = 3 A
*
*
1 1.5 V IC = 1.5 A, IB = 1.5 mA
1.8 2 V IC = 1.5 A, IB = 1.5 mA
µ
A VCB = 100 V, IE = 0
µ
µ
µ
IC = 1.5 A
s
IB1 = –IB2 = 3 mA
s
s
.
VCC = 50 V, RL = 33 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % /pulsed
SWITCHING TIME TEST CIRCUIT
RL = 33 Ω
Base Current
Wave Form
Collector Current
Wave Form
ton
90 %
10 %
t
stg tf
VIN
PW
PW = 50 s
Duty Cycle ≤ 2 %
µ
IB1
I
B2
VBB = –5 V
IC
T.U.T.
VCC = 50 V
IB1
IB2
µ
PA1436A
IC
2
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