NEC UPA1434H Datasheet
DATA SHEET
SILICON TRANSISTOR ARRAY
µ
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
PA1434
DESCRIPTION
The µPA1434 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
• Easy mount by 0.1 inch of terminal interval.
• High hFE. Low VCE(sat).
FE = 800 to 3200 (at IC = 0.5 A)
h
CE(sat) = 0.5 V MAX. (at IC = 2 A)
V
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1434H 10 Pin SIP Standard
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Base Current (DC) I
Total Power Dissipation P
a = 25 ˚C)
(T
Total Power Dissipation P
(T
c = 25 ˚C)
Junction Temperature T
Storage Temperature T
* PW ≤ 300
** 4 Circuits
µ
s, Duty Cycle ≤ 10 %
CEO 60 V
EBO 7V
C(DC) 3 A/unit
C(pulse)* 6 A/unit
B(DC) 0.6 A/unit
T1** 3.5 W
T2** 28 W
j 150 ˚C
stg –55 to +150 ˚C
10
2.5
1.410.6 ±0.1
2
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
2.54
2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3
5
4
PIN NO.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10: Emitter (E)
7
6
4.0
10 MIN.
1.4
0.5 ±0.1
9
8
101
Document No. IC-3480
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 10
Emitter Leakage Current IEBO 10
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 1
Storage Time tstg 3
Fall Time tf 1.5
*
800 3200 — VCE = 5 V, IC = 0.5 A
*
500 — VCE = 5 V, IC = 3 A
*
*
0.5 V IC = 2 A, IB = 20 mA
1.2 V IC = 2 A, IB = 20 mA
µ
A VCB = 60 V, IE = 0
µ
A VEB = 5 V, IC = 0
µ
µ
µ
IC = 2 A
s
IB1 = –IB2 = 10 mA
s
s
.
VCC = 50 V, RL = 25 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % /pulsed
SWITCHING TIME TEST CIRCUIT
RL = 25 Ω
Base Current
Wave Form
Collector Current
Wave Form
ton
90 %
10 %
t
stg tf
VIN
PW
PW = 50 s
Duty Cycle ≤ 2 %
µ
IB1
I
B2
VBB = –5 V
IC
T.U.T.
VCC = 50 V
IB1
IB2
µ
PA1434
.
.
IC
2
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