BDC05
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc)
h
FE
40 —
—
Collector–Emitter Saturation Voltage(1)
(IC = 20 mAdc, IB = 2.0 mAdc)
V
CE(sat)
— 2.0
Vdc
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
V
BE(sat)
— 2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
f
T
60 —
MHz
Collector–Base Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
C
re
— 2.8
pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
200
20
1.0
h
FE
, DC CURRENT GAIN
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.6
0.4
0.3
0
0.1 101.0
TJ = 25°C
IC = 10 mA
0.2 0.5 2.0 5.0 20 302.0 3.0 5.0 7.0 10 20 50 70 100
100
30
50
70
TJ = 125°C
25°C
–55°C
VCE = 10 V
0.5
0.2
0.1
IC = 20 mA
IC = 30 mA
30