Fairchild Semiconductor H11C3, H11C2, H11C6, H11C5, H11C4 Datasheet
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PHOTO SCR OPTOCOUPLERS
H11C1 H11C2 H11C3 H11C4 H11C5 H11C6
PACKAGE
6
6
SCHEMATIC
1
ANODE
CATHODE
2
6
5
GATE
ANODE
1
3
1
N/C
4
CATHODE
6
1
DESCRIPTION
The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
rectifier in a dual-in-line package
FEATURES
• High efficiency, low degradation, liquid epitaxial LED
• Underwriters Laboratory (UL) recognized fl File #E90700
• VDE recognized (File #94766) – ordering option .300. (e.g., H11C1.300)
• 200V/400V Peak blocking voltage
• High isolation voltage - 5300V AC (RMS)
APPLICATIONS
•Low power logic circuits
•Telecommunications equipment
•Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
• 10 A, T
• 25 W logic indicator lamp driver
• 200 V symmetrical transistor coupler (H11C1, H11C2, H11C3)
• 400 V symmetrical transistor coupler (H11C4, H11C5, H11C6)
2
L compatible, solid state relay
© 2003 Fairchild Semiconductor Corporation
Page 1 of 11
3/19/03
PHOTO SCR OPTOCOUPLERS
H11C1 H11C2 H11C3 H11C4 H11C5 H11C6
Parameter Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
Operating Temperature T
Lead Solder Temperature T
STG
OPR
SOL
EMITTER
Continuous Forward Current I
Reverse Voltage V
Forward Current - Peak (1 µs pulse, 300 pps) I
LED Power Dissipation
Derate above 25°C 1.33 mW/°C
F
R
F(pk)
P
D
DETECTOR
Power Dissipation (ambient)
Derate linearly above 25°C ambient 5.3 mW/°C
Power Dissipation (case)
Derate linearly above 25°C case 13.3 mW/°C
Peak Reverse Gate Voltage V
RMS On-State Current I
Peak On-State Current (100 µS, 1% duty cycle) I
Surge Current (10ms) I
Peak Forward Voltage V
Peak Forward Voltage V
P
D
P
D
GR
DM (RMS)
DM (Peak)
DM (Surge)
DM
DM
H11C1, H11C2, H11C3 200 V
H11C4, H11C5, H11C6 400 V
All -55 to +150 °C
All -55 to +100 °C
All 260 for 10 sec °C
All 60 mA
All 6 V
All 3.0 A
All
All
All
100 mW
400 mW
1W
All 6 V
All 300 mA
All 10 A
All 5 A
© 2003 Fairchild Semiconductor Corporation
Page 2 of 11
3/19/03
PHOTO SCR OPTOCOUPLERS
H11C1 H11C2 H11C3 H11C4 H11C5 H11C6
ELECTRICAL CHARACTERISTICS
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
EMITTER
Input Forward
Voltage
Reverse Leakage
Current
Capacitance V
DETECTOR
R
Off-State Voltage
Reverse Voltage
GK
R
GK
R
GK
R
GK
= 10k Ω , T
= 10k Ω ,T
On-State Voltage I
V
DM
Off-State Current
Reverse Current
V
DM
V
RM
V
RM
= 200 V, T
= 400 V, T
I
= 10 mA V
F
V
= 3 V I
R
= 0 V, f = 1.0 MHz C
F
= 10k Ω , T
= 10k Ω ,T
= 200V, T
= 400V, T
= 100°C, I
A
= 100°C, I
A
= 100°C, I
A
= 100°C, I
A
= 300 mA V
TM
= 100°C, I
A
R
= 10k Ω
GK
= 100°C, I
A
R
= 10k Ω
GK
= 100 °C, I
A
R
= 10k Ω
GK
= 100 °C, I
A
R
= 10k Ω
GK
(T
= 25°C Unless otherwise specified.)
A
F
R
J
= 50µA
D
= 150µA H11C4, H11C5, H11C6 400
D
= 50µA
R
= 150µA H11C4, H11C5, H11C6 400
R
= 0 mA,
F
= 0 mA,
F
= 0 mA,
F
= 0 mA,
F
V
DM
V
RM
TM
I
DM
I
RM
H11C1, H11C2, H11C3 200
H11C1, H11C2, H11C3 200
H11C1, H11C2, H11C3 50 µA
H11C4, H11C5, H11C6 150
H11C1, H11C2, H11C3 50
H11C4, H11C5, H11C6 150
All 1.2 1.5 V
All 10 µA
All 50 pF
All 1.2 1.3 V
V
V
µA
(T
TRANSFER CHARACTERISTICS
= 25°C Unless otherwise specified.)
A
Characteristics Test Conditions Symbol Device Min Typ* Max Units
Input Current to Trigger
V
= 50 V, R
AK
V
= 100 V, R
AK
= 10 k Ω
GK
= 27 k Ω
GK
H11C1,H11C2,
H11C4, H11C5
I
FT
H11C3, H11C6 30 mA
H11C1,H11C2,
H11C4, H11C5
20
11
H11C3, H11C6 14
Coupled dv/dt, input to
output (figure 8)
*Typical values at T
© 2003 Fairchild Semiconductor Corporation
= 25°C
A
dv/dt ALL 500 V/µS
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3/19/03
Ω
PHOTO SCR OPTOCOUPLERS
H11C1 H11C2 H11C3 H11C4 H11C5 H11C6
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Isolation Voltage (t = 1 min.) (note 1) V
Isolation Resistance (note 1) (V
Isolation Capacitance (note 1) (f = 1 MHz, V
*Typical values at T
Note
1. For this test, LED pins 1 and 2 are common, and SCR pins 4, 5 and 6 are common.
= 25°C
A
= 500 VDC) R
I-O
= 0) C
I-O
ISO
ISO
I-O
5300 V
11
10
0.8 pF
© 2003 Fairchild Semiconductor Corporation
Page 4 of 11
3/19/03
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