Fairchild Semiconductor H11B815 Datasheet

4-PIN PHOTODARLINGTON

OPTOCOUPLER

H11B815

PACKAGE

4

1

4

CATHODE

1

SCHEMATIC

1

2

4

COLLECTORANODE

3EMITTER

DESCRIPTION

The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

FEATURES

• Compact 4-pin package

• Current Transfer Ratio: 600% minimum (at I

• High isolation voltage between input and output (5300 VRMS)

• UL recognized (File # E90700)

= 1 mA)

F

APPLICATIONS

•Power Supply Monitors

• Relay Contact Monitor

•Telephone/Telegraph Line Receiver

•Twisted Pair Line Receiver

• Digital Logic/Digital Logic

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3/26/03

4-PIN PHOTODARLINGTON

OPTOCOUPLER

H11B815

ABSOLUTE MAXIMUM RATINGS

(No derating required up to 85°C)

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ T

= 25°C P

A

T

STG

OPR

SOL

D

-55 to +150 °C

-55 to +100 °C

260 for 10 sec °C

250 mW

EMITTER

I

V

F

P

I

F

R

(pk)

D

80 mA

6V

1A

140 mW

DC/Average Forward Input Current

Reverse Input Voltage

Forward Current - Peak (1µs pulse, 300pps)

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C 1.33 mW/°C

DETECTOR

Collector-Emitter Voltage

Emitter-Collector Voltage

Continuous Collector Current

Detector Power Dissipation @ T

= 25°C

A

Derate above 25°C 2.0 mW/°C

V

CEO

ECO

I

C

P

D

35 V

6V

200 mA

200 mW

(T

ELECTRICAL CHARACTERISTICS

= 25°C Unless otherwise speciﬁed.)

A

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ** Max Unit

EMITTER

= 20 mA) V

Input Forward Voltage

Reverse Leakage Current

DETECTOR

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Dark Current

Capacitance

(I

F

(V

= 6.0 V) I

R

(I

= 1.0 mA, I

C

(I

= 100 µA, I

E

(V

= 10 V, I

CE

(V

= 0 V, f = 1 MHz) C

CE

= 0) BV

F

= 0) BV

F

= 0) I

F

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F

R

CEO

ECO

CEO

CE

35 60 V

68 V

1.2 1.50 V

0.001 10 µA

0.005 1 µA

8pF

3/26/03

Ω

4-PIN PHOTODARLINGTON

OPTOCOUPLER

H11B815

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Min Typ** Max Units

(I

Current Transfer Ratio, Collector-Emitter

Saturation Voltage

Rise Time (non saturated)

Fall Time (non saturated)

(I

= 10 mA, V

C

(I

= 10 mA, V

C

= 1 mA, V

F

= 20 mA, I

(I

F

= 2 V, R

CE

= 2 V, R

CE

= 2 V)

CE

= 5 mA) V

C

= 100V) t

L

= 100V) t

L

CTR 600 7,500 %

CE(sat)

r

f

0.8 1.0 V

300 µs

250 µs

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ** Max Units

(I

Input-Output Isolation Voltage

Isolation Resistance

Isolation Capacitance

** All typicals at TA = 25°C

[ 1 µA, 1 min.) V

I-O

(V

= 500 VDC) R

I-O

(V

= &, f = 1 MHz) C

I-O

ISO

5300 Vac(rms)

11

10

0.5 pf

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3/26/03