Fairchild Semiconductor H11B2, H11B1, H11B3, H11B255, CNX48U Datasheet
DESCRIPTION
The CNX48U, H11BX, MOC8080 and TIL113 have a
gallium arsenide infrared emitter optically coupled to a
silicon planar photodarlington.
PHOTODARLINGTON OPTOCOUPLERS
CNX48U H11B1 H11B2 H11B255 H11B3
MOC8080 TIL113
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
6/1/00 200042A
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., H11B1.300)
6
1
6
1
6
1
SCHEMATIC
Parameter Symbol Device Value Units
TOTAL DEVICE
T
STG
All -55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
All -55 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation @ TA= 25°C
P
D
All
250 mW
Derate above 25°C 3.3 mW/°C
EMITTER
I
F
All 100 mA
Continuous Forward Current
Reverse Voltage V
R
All 6 V
Forward Current - Peak (300 µs, 2% Duty Cycle) IF(pk) All 3.0 A
LED Power Dissipation @ TA= 25°C
P
D
All
100 mW
Derate above 25°C 1.8 mW/°C
DETECTOR CNX48U, TIL113 30
H11B1, H11B2
25
Collector-Emitter Breakdown Voltage
BV
CEO
H11B3 V
H11B255
55
MOC8080
CNX48U, H11B1
H11B2, H11B3 30 V
Collector-Base Breakdown Voltage BV
CBO
TIL113
H11B255
55 V
MOC8080
Emitter-Collector Breakdown Voltage BV
ECO
All 7 V
Detector Power Dissipation @ TA= 25°C
P
D
All
150 mW
Derate above 25°C 2.0 mW/°C
ANODE
1
CATHODE
2
3
N/C
BASE
6
COLLECTOR
5
4
EMITTER
6/1/00 200042A
Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER H11B1, H11B2
(IF= 10 mA)
H11B255
0.8 1.2 1.5
MOC8080
Input Forward Voltage V
F
TIL113
V
(IF= 10 mA) CNX48U 1.2 1.3
(IF= 10 mA, TA= -55°C)
MOC8080
0.9 1.3 1.7
(IF= 10 mA, TA= 100°C) 0.7 1.05 1.4
(IF= 50 mA) H11B3 1.35 1.5
Reverse Leakage Current (VR= 6 V) I
R
All 0.001 10 µA
Capacitance (VF= 0 V, f = 1.0 MHz) C All 50 pF
DETECTOR
(I
C
= 1 mA, IF= 0) CNX48U
30 60
Collector-Emitter
(I
C
= 100 µA, IF= 0)
BV
CEO
TIL113
Breakdown Voltage (IC= 10 mA, IF= 0)
H11B1, H11B2
25 60
V
H11B3
(IC= 100 µA, IF= 0) H11B255
55 70
(IC= 1 mA, IF= 0) MOC8080
CNX48U, H11B1
Collector-Base
(I
C
= 100 µA, IE= 0) H11B2, H11B3 30 100
Breakdown Voltage
BV
CBO
TIL113 V
(IC= 100 µA, IF= 0)
H11B255
55 100
MOC8080
Emitter-Collector
(I
E
= 100 µA, IB= 0) BV
ECO
All 7 10 V
Breakdown Voltage
Collector-Emitter
(V
CE
= 10 V, Base Open) I
CEO
All 1 100 nA
Dark Current
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
PHOTODARLINGTON OPTOCOUPLERS
CNX48U H11B1 H11B2 H11B255 H11B3
MOC8080 TIL113
Note
** Typical values at T
A
= 25°C
Characteristic Test Conditions Symbol Min Typ** Max Units
Input-Output Isolation Voltage
(2)
(I
I-O
61 µA, Vrms, t = 1 min.) 5300 Vac(rms)
Isolation Resistance
(2)
(V
I-O
= 500 VDC) R
ISO
10
11
1
Isolation Capacitance
(2)
(V
I-O
= , f = 1 MHz) C
ISO
0.8 pf
ISOLATION CHARACTERISTICS
DC Characteristics Test Conditions Symbol Device Min Typ** Max Units
(IF= 10 mA, VCE= 5 V)
MOC8080 50 (500)
H11B255 10 (100)
(I
F
= 10 mA, VCE= 1 V)
CNX48U 60 (600)
Collector Output TIL113 30 (300)
Current
(1)
IC (CTR) H11B1 5 (500) mA (%)
(I
F
= 1 mA, VCE= 5 V) H11B2 2 (200)
H11B3 1 (100)
(I
F
= 1 mA, VCE= 1 V)
CNX48U
5 (500)
(I
F
= 0.5 mA, VCE= 1 V) 1.75 (350)
(IF=1 mA, IC= 1 mA)
H11B1, H11B2
1.0
H11B3, MOC8080
Saturation Voltage (I
F
= 5 mA, IC= 10 mA) V
CE(sat)
CNX48U 1.0 V
(I
F
= 50 mA, IC= 50 mA) H11B255 1.0
(I
F
= 8 mA, IC= 2 mA) TIL113 1.25
AC Characteristics
t
on
H11B1
25
(I
C
= 10 mA, VCE= 10 V) H11B2
(R
L
= 100 1) (Fig.7)
t
off
H11B255
18
H11B3
(I
F
= 10 mA, VCC= 5 V)
t
on
3.5
(R
E
= 100 1), (RBE= 1M1)
t
off
36
Switching Times
(Fig. 8)
µs
(I
F
= 1 mA, VCC= 5 V)
t
on
CNX48U
70
(R
E
= 1k1), (RBE= 10M1)
t
off
190
(Fig. 8)
(I
F
= 5 mA, VCC= 10 V) t
on
MOC8080
3.5
(R
L
= 100 1) (Fig.7) t
off
25
(I
F
= 200 mA, IC= 50 mA)
t
on
0.35 5
(V
CC
= 10 V) (RL= 100 1)
t
off
TIL113
55 100
(Fig.7)
6/1/00 200042A
PHOTODARLINGTON OPTOCOUPLERS
CNX48U H11B1 H11B2 H11B255 H11B3
MOC8080 TIL113
TRANSFER CHARACTERISTICS (T
A
= 25°C Unless otherwise specified.)
Note
** Typical values at TA= 25°C
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