Parameters Test Conditions Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage I
F
= 1 mA
V
F
All
1.5 V
Reverse Leakage Current
V
R
= 5 V, TA= 25°C
I
R
All 10 µA
V
R
= 5 V, TA= 70°C
I
R
All 100 µA
Capacitance V = 0, f = 1.0 MHz
C
J
All 100 pF
DETECTOR
Breakdown Voltage
Collector to Emitter I
C
= 1.0 mA, IF= 0 BV
CEO
All 30
V
Collector to Base IC= 100 µA, IF= 0 BV
CBO
All 70 V
Emitter to Collector IC= 100 µA, IF= 0 BV
ECO
All 7 V
Leakage Current
Collector to Emitter V
CE
= 10 V, IF= 0 I
CEO
All 5 10
µA
Capacitance
V
CE
= 10 V, f = 1 MHz C
CE
All 2
pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 0-70°CUnless otherwise specified.)
DC Characteristics Test Conditions Symbol Device Min Typ Max Units
H11AG1 300
I
F
= 1 mA, VCE= 5 V CTR H11AG2 200
H11AG3 100
H11AG1 100
Current Transfer Ratio
I
F
= 1 mA, VCE= 0.6 V CTR
H11AG2 50
%
H11AG3 20
IF= 0.2 mA, VCE= 1.5 V CTR
H11AG1 100
H11AG2 50
Saturation Voltage
I
F
= 2.0 mA, IC= 0.5 mA
V
CE(SAT)
All .40 V
AC Characteristics Test Conditions Symbol Device Min Typ Max Units
Non-Saturated Switching Times
Turn-On Time R
L
= 100 Ω, IF= 1 mA, VCC= 5 V
t
on
All 5 µS
Turn-Off Time R
L
= 100 Ω, IF= 1 mA, VCC= 5 V
t
off
All 5 µS
TRANSFER CHARACTERISTICS
(TA= 25°C Unless otherwise specified.)
www.fairchildsemi.com 2 OF 8 1/28/02 DS300213
Parameters Test Conditions Symbol Min Typ Max Units
Input-Output Isolation Voltage I
I-0
≤ 1 µA, t = 1 min. V
ISO
5300 Vac(rms)
ISOLATION CHARACTERISTICS
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1 H11AG2 H11AG3