4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
PACKAGE
4
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300% H11A817: 50-600%
H11AA814A: 50-150% H11A817A: 80-160%
H11A617A: 40%-80% H11A817B: 130-260%
H11A617B: 63%-125% H11A817C: 200-400%
H11A617C: 100%-200% H11A817D: 300-600%
H11A617D: 160%-320%
• Minimum BV
of 70V guaranteed
CEO
H11AA814 SCHEMATIC
1
2
4
COLLECTOR
3 EMITTER
H11A617 & H11A817 SCHEMATIC
CATHODE
1
2
4
COLLECTORANODE
3EMITTER
APPLICATIONS
H11AA814 Series
•AC line monitor
• Unknown polarity DC sensor
•Telephone line interface
H11A617 and H11A817 Series
•Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
Parameter Symbol Device Value Units
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
T
T
T
I
V
V
P
V
F
P
P
STG
OPR
SOL
D
I
F
R
(pk)
D
CEO
ECO
I
C
D
H11A817/A/B/C/D
H11A817/A/B/C/D
All -55 to +150 °C
All -55 to +100 °C
All 260 for 10 sec °C
All 200 mW
All 50 mA
H11A617A/B/C/D
6
5
All 1.0 A
All
100 mW
1.33 mW/°C
All 70 V
H11AA814/A
H11A617A/B/C/D
6
7
6
All 50 mA
All
150 mW
2.0 mW/°C
V
V
(T
ELECTRICAL CHARACTERISTICS
= 25°C Unless otherwise specified.)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
(I
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Dark Current
Collector-Emitter Capacitance
*Typical values at T
© 2003 Fairchild Semiconductor Corporation
= 25°C.
A
(V
(I
C
(I
E
(V
CE
= 60 mA)
F
(I
= 20 mA)
F
(I
= ±20 mA)
F
(V
= 6.0 V)
R
(V
= 5.0 V)
R
= 1.0 mA, I
= 100 µA, I
= 10V, I
CE
= 0) BV
F
= 0) BV
F
= 0) I
F
= 0 V, f = 1 MHz) C
V
F
I
R
CEO
ECO
H11AA814/A, H11A817/A/B/C/D,
CEO
CE
Page 2 of 9
H11A617A/B/C/D 1.35 1.65
H11A817/A/B/C/D 1.2 1.5
H11AA814/A 1.2 1.5
H11A617A/B/C/D
H11A817/A/B/C/D
.001 10 µA
ALL 70 100 V
H11AA814/A 6
10 VH11A617A/B/C/D 7
H11A817/A/B/C/D 6
H11A617C/D
100
1
H11A617A/B 50
ALL 8 pF
4/24/03
V
nA
Ω
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
TRANSFER CHARACTERISTICS
(T
= 25°C Unless otherwise specified.)
A
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
(I
= ±1 mA, V
F
(I
= ±1 mA, V
F
= 5 V) (note 1)
CE
= 5 V) (note 1)
CE
H11AA814 20 300 %
H11AA814A 50 150 %
H11A617A 40 80 %
= 10 mA, V
(I
F
= 5 V) (note 1)
CE
H11A617B 63 125 %
H11A617C 100 200 %
H11A617D 160 320 %
Current Transfer
Ratio
= 5 mA, V
(I
F
= 5 V) (note 1)
CE
CTR
H11A817 50 600 %
H11A817A 80 160 %
H11A817B 130 260 %
H11A817C 200 400 %
H11A817D 300 600 %
H11A617A 13 %
= 1 mA, V
(I
F
= 5 V) (note 1)
CE
H11A617B 22 %
H11A617C 34 %
H11A617D 56 %
Collector-Emitter
Saturation Voltage
= 1 mA, I
(I
C
(I
= 2.5 mA, I
C
= 1 mA, I
(I
C
= ±20 mA)
F
= 10 mA)
F
= 20 mA)
F
V
CE (SAT)
H11AA814/A 0.2
VH11A617A/B/C/D 0.4
H11A817/A/B/C/D 0.2
AC Characteristic
Rise Time
Fall Time
= 2 mA, V
(I
C
(I
= 2 mA, V
C
= 2 V, R
CE
= 2 V, R
CE
= 100V) (note 2) t
L
= 100V) (note 2) t
L
r
f
ALL 2.4 18 µs
ALL 2.4 18 µs
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage (note 3) f = 60Hz, t = 1 min
(V
Isolation Resistance
Isolation Capacitance
*Typical values at T
= 25°C.
A
NOTES
1. Current Transfer Ratio (CTR) = I
/I
C
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
© 2003 Fairchild Semiconductor Corporation
= 500 VDC) R
I-O
(V
= 0, f = 1 MHz) C
I-O
Page 3 of 9
V
ISO
ISO
ISO
5300 Vac(rms)
11
10
0.5 pf
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
Fig. 1 Normalized CTR vs. Forward Current
1.4
= 25˚C
A
1.2
= 5 V, T
1
CE
0.8
= 5 mA, V
F
0.6
0.4
NORMALIZED CTR
0.2
0
0
CTR NORMALIZED @ I
Fig. 3 Collector-Emitter Saturation Voltage
.14
IF = 20 mA
I
= 1 mA
C
.12
.1
.08
.06
- COLLECTOR-EMITTER
.04
SATURATION VOLTAGE (V)
CE (SAT)
.02
V
10 15 20 25
5
- FORWARD CURRENT (mA)
I
F
vs. Ambient Temperature
Fig. 2 Normalized CTR vs. Ambient Temperature
1.2
= 25˚C
A
= 5 V, T
1
CE
I
F
0.8
= 5 mA, V
F
NORMALIZED CTR
0.6
30
0.4
CTR NORMALIZED @ I
-50
-25 0 +25 +50 +75
- AMBIENT TEMPERATURE (˚C)
T
A
Fig. 4 Forward Voltage vs. Forward Current
1.7
1.5
1.3
T = -55˚C
1.1
T = 25˚C
0.9
T = 100˚C
- FORWARD VOLTAGE (V)
F
V
0.7
IF = 10 mA
= 5 mA
+100
0
-50 -25 0
T
- AMBIENT TEMPERATURE (˚C)
A
25
20
15
10
COLLECTOR CURRENT (mA)
5
C -
I
0
1 2345678910
0
V
- COLLECTOR-EMITTER VOLTAGE (V)
CE
25 50 75 100 125
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
IF = 20 mA
© 2003 Fairchild Semiconductor Corporation
IF = 10 mA
IF = 5 mA
IF = 1 mA
Page 4 of 9
0.5
0.1 0.2 0.5
1.0 2.0 5 10 20 50 100
- FORWARD CURRENT (mA)
I
F
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
COLLECTOR-EMITTER CURRENT (µA)
CEO -
I
Fig. 6 Collector Leakage Current
10
1
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
vs. Ambient Temperature
VCE = 10 V
25 50 75 100 125
TA - AMBIENT TEMPERATURE (˚C)
1000
100
10
RISE AND FALL TIME (µs)
f-
1
T
r/
T
0.1
0.1
Fig. 7 Rise and Fall Time
IF = 5 mA
= 5 V
V
CC
= 25˚C
T
A
R - LOAD RESISTOR (KV)
vs. Load Resistor
toff
t
f
t
on
t
r
110100
Figure 8. Switching Time Test Circuit and Waveforms
TEST CIRCUIT WAVE FORMS
= 10V
V
CC
INPUT PULSE
I
I
F
C
R
= 100Ω
L
INPUT
I
Adjust
F to produce IC = 2 mA
Recommended Thermal Reflow Profile for Surface Mount DIP Package
Temperature (°C)
250
200
150
100
50
0
01 2345
© 2003 Fairchild Semiconductor Corporation
OUTPUT
10%
90%
225°C
220°C: 10 sec to 40 sec
Time > 183°C: 120 sec to 180 sec
Page 5 of 9
OUTPUT PULSE
t
r
t
f
Time (Min)
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
Package Dimensions (Through Hole) Package Dimensions (Surface Mount)
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.250 (6.35)
0.016 (0.40)
15°
0.300 (7.62)
typ
0.008 (0.20)
SEATING PLANE
0.154 (3.90)
0.120 (3.05)
0.100 (2.54)
TYP
0.190 (4.83)
0.175 (4.45)
0.200 (5.08)
0.115 (2.92)
0.020 (0.51)
MIN
Package Dimensions (0.4” Lead Spacing)
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.250 (6.35)
0.300 (7.62)
TYP
0.315 (8.00)
MIN
0.405 (10.30)
MAX
0.016 (0.40)
0.008 (0.20)
SEATING PLANE
0.070 (1.78)
0.045 (1.14)
0.100 (2.54)
TYP
Lead Coplanarity 0.004 (0.10) MAX
0.190 (4.83)
0.175 (4.45)
0.200 (5.08)
0.115 (2.92)
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
Footprint Dimensions (Surface Mount)
0.070 (1.78)
0.060 (1.52)
0.190 (4.83)
0.175 (4.45)
E
LAN
SEATING P
0.154 (3.90)
0.120 (3.05)
0.200 (5.08)
0.115 (2.92)
0.004 (0.10)
MIN
0.100 (2.54)
TYP
0.270 (6.86)
0.250 (6.35)
0.400 (10.16)
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
TYP
0 to 15°
0.016 (0.40)
0.008 (0.20)
Page 6 of 9
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
ORDERING INFORMATION
Option Order Entry Identifier Description
S.S Surface Mount Lead Bend
SD .SD Surface Mount; Tape and reel
W.W 0.4" Lead Spacing
300 .300 VDE 0884
300W .300W VDE 0884, 0.4" Lead Spacing
3S .3S VDE 0884, Surface Mount
3SD .3SD VDE 0884, Surface Mount, Tape & Reel
MARKING INFORMATION
Definitions
1Fairchild logo
2Device number
3
4 One digit year code
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
4
XVT
3
1
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
YY
814
5
6
2
© 2003 Fairchild Semiconductor Corporation
Page 7 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
Carrier Tape Specifications
12.0 ± 0.1
5.00 ± 0.20
13.2 ± 0.2
0.30 ± 0.05
4.0 ± 0.1
4.0 ± 0.1
Ø1.55 ± 0.05
1.75 ± 0.10
7.5 ± 0.1
16.0 ± 0.3
4.95 ± 0.20
0.1 MAX
NOTE
All dimensions are in millimeters
10.30 ± 0.20
User Direction of Feed
Ø1.6 ± 0.1
© 2003 Fairchild Semiconductor Corporation
Page 8 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES H11A617 SERIES H11A817 SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2003 Fairchild Semiconductor Corporation
Page 9 of 9
4/24/03
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