Fairchild Semiconductor H11AA4, H11AA3, H11AA2, H11AA1 Datasheet
DESCRIPTION
The H1 1AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4
APPLICATIONS
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
FEATURES
• Bi-polar emitter input
• Built-in reverse polarity input protection
• Underwriters Laboratory (UL) recognized File #E90700
• VDE approved File #E94766 (ordering option ‘300’)
6
1
6
1
6
1
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300212 12/12/01 1 OF 7 www.fairchildsemi.com
Parameter Symbol Device Value Units
TOTAL DEVICE
T
STG
All -55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
All -55 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation
P
D
All
350 mW
Derate Linearly From 25°C 4.6 mW/°C
EMITTER
I
F
All 100 mA
Continuous Forward Current
Forward Current - Peak (1 µs pulse, 300 pps) IF(pk) All ±1.0 A
LED Power Dissipation
P
D
All
200 mW
Derate Linearly From 25°C 2.6 mW/°C
DETECTOR
Detector Power Dissipation
P
D
All
300 mW
Derate above 25°C 4.0 mW/°C
1
2
3
6
BASE
5COLL
4 EMITTER
Parameter Test Conditions Symbol Device Min Typ Max Unit
EMITTER
Input Forward Voltage I
F
= ±10 mA
V
F
All
1.2 1.5 V
Capacitance VF= 0 V, f = 1.0 MHz C
J
All 80 pF
DETECTOR
Breakdown Voltage
Collector to Emitter I
C
= 1.0 mA, IF= 0 BV
CEO
All 30
V
Collector to Base IC= 100 µA, IF= 0 BV
CBO
All 70 V
Emitter to Base IE= 100 µA, IF= 0 BV
EBO
All 5 V
Emitter to Collector IE= 100 µA, IF= 0 BV
ECO
All 7 V
Leakage Current
Collector to Emitter VCE= 10 V, IF= 0 I
CEO
H11AA1,3,4 50
nA
H11AA2 200
Capacitance
Collector to Emitter V
CE
= 0, f = 1 MHz C
CE
All 10
pF
Collector to Base
V
CE
= 0, f = 1 MHz C
CB
All 80
pF
Emitter to Base
V
CE
= 0, f = 1 MHz C
EB
All 15 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ Max Units
Package Capacitance input/output V
I-O
= 0, f = 1 MHz C
I-O
0.7 pF
Isolation Voltage f = 60 Hz, t = 1 min. V
ISO
5300 V
Isolation Resistance V
I-O
= 500 VDC R
ISO
10
11
Ω
ISOLATION CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ Max Units
H11AA4 100
Current Transfer Ratio,
IF= ±10 mA, VCE= 10 V CTR
CE
H11AA3 50
%
Collector to Emitter H11AA1 20
H11AA2 10
Current Transfer Ratio, Symmetry IF= ±10 mA, VCE= 10 V (Figure.8) All .33 3.0 %
Saturation Voltage
I
F
= ±10 mA, ICE= 0.5 mA V
CE(SAT)
All .40 V
Collector to Emitter
TRANSFER CHARACTERISTICS
(TA= 25°C Unless otherwise specified.)
www.fairchildsemi.com 2 OF 7 12/12/01 DS300212
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4
DS300212 12/12/01 3 OF 7 www.fairchildsemi.com
AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4
100
80
60
40
20
0
-20
-40
- INPUT CURRENT (mA)
F
I
-60
-80
-100
-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0
VF - INPUT VOLTAGE (V)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.6
Fig. 1 Input Voltage vs. Input Current
1.4
R
1.2
T
C
D
1.0
MALIZE
R
O
0.8
N
0.6
Normalized to
= 10 mA
I
F
= 25˚C
T
A
0.4
-75 -50 -25 0 25 50 75 100 125
IF = 20 mA
TA - AMBIENT TEMPERATURE (˚C)
IF = 5 mA
IF = 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.4
VCE = 5.0V
= 25˚C
T
A
1.2
1.0
R
T
C
0.8
D
0.6
MALIZE
R
O
N
0.4
0.2
0.0
0 5 10 15 20
Normalized to
= 10 mA
I
F
IF - FORWARD CURRENT (mA)
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
)
0.9
0.8
RBE(OPEN)
0.7
/ CTR
0.6
RBE
0.5
0.4
0.3
0.2
0.1
NORMALIZED CTR ( CTR
0.0
10 100 1000
IF = 20 mA
IF = 10 mA
IF = 5 mA
RBE- BASE RESISTANCE (kW)
VCE= 5.0 V
Fig. 5 CTR vs. RBE (Saturated)
1.0
)
0.9
0.8
RBE(OPEN)
0.7
/ CTR
0.6
RBE
0.5
0.4
0.3
0.2
0.1
NORMALIZED CTR ( CTR
0.0
10 100 1000
IF = 20 mA
IF = 10 mA
IF = 5 mA
RBE- BASE RESISTANCE (k W)
VCE= 0.3 V
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
100
10
1
IF = 2.5 mA
0.1
0.01
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
TA = 25
0.001
0.01 0.1 1 10
CE (SAT)
V
IF = 5 mA
˚C
IC - COLLECTOR CURRENT (mA)
IF = 10 mA
IF = 20 mA
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