Fairchild Semiconductor BDX33C, BDX33B Datasheet
BDX33/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose
• Power Darlington TR
• Complement to BDX34/34A/34B/34C respectively
BDX33/A/B/C
1
1.Base 2.Collector 3.Emitter
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC) 10 A
*Collector Current (Pulse) 15 A
Base Current 0.25 A
Collector Dissipation (TC=25°C) 70 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BDX33
: BDX33A
: BDX33B
: BDX33C
: BDX33
: BDX33A
: BDX33B
: BDX33C
45
60
80
100
45
60
80
100
V
V
V
V
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX33/A/B/C
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
: BDX33
: BDX33A
: BDX33B
: BDX33C
(sus) * Collector-Emitter Sustaining Voltage
V
CER
V
(sus) * Collector-Emitter Sustaining Voltage
CEV
I
CBO
Collector Cut-off Current
I
CEO
IEBO
hFE
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain
: BDX33/34
: BDX33B/33C
(sat) * Collector-Emitter Saturation Voltage
V
CE
: BDX33/33A
: BDX33B/33C
(on) * Base-Emitter ON Voltage
V
BE
: BDX33/33A
: BDX33B/33C
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulse
* Parallel Diode Forward Voltage IF = 8A 4 V
: BDX33
: BDX33A
: BDX33B
: BDX33C
: BDX33
: BDX33A
: BDX33B
: BDX33C
: BDX33
: BDX33A
: BDX33B
: BDX33C
: BDX33
: BDX33A
: BDX33B
: BDX33C
= 100mA IB = 0 45
I
C
60
80
100
I
= 100mA, IB = 0
C
= 100Ω
R
BE
45
60
80
100
= 100mA, IB = 0
I
C
= 1.5V
V
BE
45
60
80
100
= 45V, IE = 0
V
CB
V
= 60V, IE = 0
CB
= 80V, IE = 0
V
CB
= 100V, IE = 0
V
CB
V
= 22V, IB = 0
CE
= 30V, IB = 0
V
CE
= 40V, IB = 0
V
CE
V
= 50V, IB = 0
CE
= 5V , IC = 0 5 mA
EB
= 3V, IC = 4A
V
CE
= 3V, IC = 3A
V
CE
I
= 4A, IB = 8mA
C
= 3A, IB = 6mA
I
C
750
750
= 3V, IC = 4A
V
CE
V
= 3V, IC = 3A
CE
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
2.5
2.5
2.5
2.5
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
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