Fairchild Semiconductor BDW94, BDW94C Datasheet
BDW94/A/B/C
Power Linear and Switching Applications
• Power Darlington TR
• Complement to BDW93, BDW93A, BDW93B and BDW93C respectively
BDW94/A/B/C
1
1.Base 2.Collector 3.Emitter
TO-220
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC) - 12 A
*Collector Current (Pulse) - 15 A
Base Current - 0.2 A
Collector Dissipation (TC=25°C) 80 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BDW94
: BDW94A
: BDW94B
: BDW94C
: BDW94
: BDW94A
: BDW94B
: BDW94C
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
V
V
V
V
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW94/A/B/C
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage
CEO
: BDW94
: BDW94A
: BDW94B
: BDW94C
I
CBO
Collector Cut-off Current
: BDW94
: BDW94A
: BDW94B
: BDW94C
I
CEO
Collector Cut-off Current
: BDW94
: BDW94A
: BDW94B
: BDW94C
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 20mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 20mA
V
BE
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Emitter Cut-off Current V
* DC Current Gain V
* Parallel Diode Forward Voltage IF = - 5A
= - 100mA, IB = 0 - 45
I
C
- 60
- 80
- 100
V
= - 45V, IE = 0
CB
= - 60V, IE = 0
V
CB
= - 80V, IE = 0
V
CB
V
= - 100V, IE = 0
CB
= - 45V, IB = 0
V
CE
= - 60V, IB = 0
V
CE
V
= - 80V, IB = 0
CE
= - 100V, IB = 0
V
CE
= - 5V, IC = 0 - 2 mA
EB
= - 3V, IC = -3A
CE
= - 3V, IC = - 5A
V
CE
V
= - 3V, IC = - 10A
CE
= - 10A, IB = - 100mA
I
C
1000
750
100
- 100
- 100
- 100
- 100
20000
- 2.5
= - 10A, IB = - 100mA
I
C
- 1.3
I
= -1 0A
F
- 1.8
-1
- 1
- 1
- 1
- 2
- 3
- 4
- 2
- 4
V
V
V
V
µA
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
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