Fairchild Semiconductor BDW93CF Datasheet
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94CF respectively
BDW93CF
BDW93CF
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Collector Current (DC) 12 A
*Collector Current (Pulse) 15 A
Base Current 0.2 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 100 V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA
CE
(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA
V
BE
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
* Parallel Diode Forward Voltage IF = 5A
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 100V, IE = 0 100 µA
CB
= 100V, IB = 0 1 mA
CE
= 5V , IC = 0 2 mA
EB
= 3V, IC = 3A
CE
V
= 3V, IC = 5A
CE
= 3V, IC = 10A
V
CE
= 10A, IB = 100mA
I
C
I
= 10A, IB = 100mA
C
= 10A
I
F
1000
750
100
1.3
1.8
20000
2
3
2.5
4
2
4
V
V
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical characteristics
BDW93CF
100k
10k
1k
, DC CURRENT GAIN
FE
h
100
0.1 1 10 100
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain Figure 2. Collector -Emitter Saturation Voltage
20
16
12
8
VCE = 3 V
VCE = 3V
10
1
(sat) [V], SATURATION VOLTAGE
CE
V
0.1
0.1 1 10 100
IC= 250 I
B
IC [A], COLLECTOR CURRENT
1000
f=1MHz
I
=0
E
100
4
[A], COLLECTOR CURRENT
C
I
0
0.0 0.8 1.6 2.4 3.2 4.0
VBE [V], BASE-EMITTER VOLTAGE
[pF], OUTPUT CAPACTIANCE
ob
C
10
110100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Collector Output Capacitance
100
IC MAX.
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
DC
100 us
1 ms
5 ms
VCE [V], COLLECTOR EMITTER VOLTAGE
50
40
30
20
[W], POW ER DISS IPATION
10
D
P
0
0 255075100125150175
TC [oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International Rev. A, February 2000
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