BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
BDW93/A/B/C
1
1.Base 2.Collector 3.Emitter
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC) 12 A
*Collector Current (Pulse) 15 A
Base Current 0.2 A
Collector Dissipation (TC=25°C) 80 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BDW93
: BDW93A
: BDW93B
: BDW93C
: BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
45
60
80
100
V
V
V
V
V
V
V
V
Thermal Characteristics
Symbol Parameter Value Units
R
θjc
©2000 Fairchild Semiconductor International Rev. A, February 2000
Thermal Resistance Junction to Case 1.5 °C/W
TC=25°C unless otherwise noted
BDW93/A/B/C
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
(sus) * Collector-Emitter Sustaining Voltage
CEO
: BDW93
: BDW93A
: BDW93B
: BDW93C
I
CBO
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
I
CEO
Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA
V
BE
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Emitter Cut-off Current V
* DC Current Gain V
* Parallel Diode Forward Voltage IF = 5A
= 100mA, IB = 0 45
I
C
60
80
100
V
= 45V , IE = 0
CB
= 60V , IE = 0
V
CB
= 80V , IE = 0
V
CB
V
= 100V, IE = 0
CB
= 45V , IB = 0
V
CE
= 60V , IB = 0
V
CE
V
= 80V , IB = 0
CE
= 100V, IB = 0
V
CE
= 5V , IC = 0 2 mA
EB
= 3V, IC = 3A
CE
= 3V, IC = 5A
V
CE
V
= 3V, IC = 10A
CE
1000
750
100
100
100
100
100
1
1
1
20000
2
= 10A, IB = 100mA
I
C
3
2.5
= 10A, IB = 100mA
I
C
I
= 10A
F
1.3
1.8
4
2
4
1
V
V
V
V
µA
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000