Fairchild Semiconductor BDW23C, BDW23B, BDW23A, BDW23 Datasheet
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
• Power Darlington TR
• Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
BDW23/A/B/C
1
1.Base 2.Collector 3.Emitter
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current (DC) 6 A
*Collector Current (Pulse) 8 A
Base Current 0.2 A
Collector Dissipation (TC=25°C) 50 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
: BDW23
: BDW23A
: BDW23B
: BDW23C
: BDW23
: BDW23A
: BDW23B
: BDW23C
45
60
80
100
45
60
80
100
V
V
V
V
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW23/A/B/C
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max.
V
(sus) Collector-Emitter Sustaining Voltage
CEO
ICBO
I
CEO
IEBO
hFE
V
(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA
CE
(sat) * Base-Emitter Saturation Voltage IC = 2A, IB = 8mA 2.5 V
V
BE
(on) * Base-Emitter ON Voltage V
V
BE
V
F
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
* Parallel Diode Forward Voltage IF = 2A 1.8 V
: BDW23
: BDW23A
: BDW23B
: BDW23C
: BDW23
: BDW23A
: BDW23B
: BDW23C
: BDW23
: BDW23A
: BDW23B
: BDW23C
I
= 100mA, IB = 0 45
C
60
80
100
= 45V , IE = 0
V
CB
= 60V , IE = 0
V
CB
V
= 80V , IE = 0
CB
= 100V, IE = 0
V
CB
= 22V , IB = 0
V
CE
V
= 30V , IB = 0
CE
= 40V , IB = 0
V
CE
= 50V , IB = 0
V
CE
= 5V , IC = 0 2 mA
EB
= 3V, IC = 1A
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 6A
V
CE
= 6A, IB = 60mA
I
C
= 3V, IC = 1A
CE
V
= 3V, IC = 6A
CE
1000
750
100
200
200
200
200
500
500
500
500
20000
2
3
2.5
3
Unit
s
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Loading...