Fairchild Semiconductor BD244C, BD244A, BD244 Datasheet
BD244/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD243, BD243A, BD243B and BD243C respectively
BD244/A/B/C
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage - 5 V
Collector Current (DC) - 6 A
*Collector Current (Pulse) - 10 A
Base Current - 2 A
Collector Dissipation (TC=25°C) 65 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
(sus) * Collector-Emitter Sustaining Voltage
V
CEO
I
CEO
I
CES
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC = - 6A, IB = - 1A - 1.5 V
V
CE
(on) * Base-Emitter ON Voltage V
V
BE
* Pulse Test: PW =300µs, duty Cycle =2% Pulsed
Collector Cut-off Current : BD244/244A
: BD 244B/24 4C
Collector Cut-off Current : BD244
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
: BD244
: BD244A
: BD244B
: BD244C
: BD244
: BD244A
: BD244B
: BD244C
TC=25°C unless otherwise noted
: BD244
: BD244A
= - 30mA, IB = 0
I
C
: BD244B
: BD244C
V
= - 30V, IB = 0
CE
= - 60V, IB = 0
V
CE
V
= - 45V, V
: BD244A
: BD244B
: BD244C
CE
V
= - 60V, V
CE
= - 80V, V
V
CE
= - 100V , V
V
CE
= - 5V , IC = 0 - 1 mA
EB
= - 4V , IC = - 0.3A
CE
V
= - 4V, IC = - 3A
CE
= - 4V, IC = - 6A - 2 V
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
- 0.7
- 0.7mAmA
- 0.4
- 0.4
- 0.4
- 0.4
30
15
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
BD244/A/B/C
1000
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 - 1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-1
-0.1
(sat)(V), SATURATION VOLTAGE
CE
V
-0.01
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
IC = 10.1 I
VCE = 2V
B
-1.8
-1.7
-1.6
-1.5
-1.4
-1.3
-1.2
-1.1
-1.0
-0.9
-0.8
(sat)(V), SATURATION VOLTAGE
-0.7
BE
V
-0.6
-0.5
-0.1 -1 -10
IC = 10.1 I
B
IC[A], COLLECTOR CU RRENT
10
m
s
BD244
BD244A
BD244B
BD244C
10µs
1
m
s
DC
100µs
-100
-10
IC(max)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER V OLT AGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175 200
T[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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